| PART |
Description |
Maker |
| AP01L60AT10 |
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness effectiveness
|
Advanced Power Electronics Corp.
|
| AP2330GN-HF |
Advanced Power MOSFETs
|
TY Semiconductor Co., Ltd
|
| AP2306AGEN-HF |
Advanced Power MOSFETs
|
TY Semiconductor Co., Ltd
|
| IXFK27N80 IXFK25N80 IXFN27N80 IXFN25N80 |
CAP,Polypropylene,60uF,10-% Tol,10 % Tol
HiPerFETTM Power MOSFETs
MOSFET with FAST Intrinsic Diode
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS[IXYS Corporation]
|
| IXFH26N60Q IXFT26N60Q |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFETTM Power MOSFETs Q-Class
|
IXYS[IXYS Corporation]
|
| IXFR24N50 IXFR26N50 |
Discrete MOSFETs: HiPerFET Power MOSFETS
HIPERFET POWER MOSFETS ISOPLUS247 (ELECTRICALLY ISOLATED BACK SURFACE)
|
IXYS Corporation
|
| IXFN130N30 |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFET Power MOSFETs Single Die MOSFET
|
IXYS
http://
|
| IXFE180N20 |
HiPerFET Power MOSFETs Single Die MOSFET
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS Corporation
|
| FMM75-01F |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFETTM Power MOSFET Phaseleg Topology in ISOPLUS i4-PACTM
From old datasheet system
|
IXYS[IXYS Corporation]
|
| IXFH4N100 IXFT4N100 IXFH4N100Q IXFT4N100Q |
N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电000V,导通电.0Ω的N沟道增强型HiPerFET功率MOSFET) 4 A, 1000 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 4A I(D) | TO-247AD
HiPerFET Power MOSFETs Q-Class
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| QM3007K |
P-Ch 30V Fast Switching MOSFETs Advanced high cell density Trench technology
|
TY Semiconductor Co., Ltd
|
