| PART |
Description |
Maker |
| IXFX52N60Q2 IXFK52N60Q2 |
Discrete MOSFETs: HiPerFET Power MOSFETS
Advanced Technical Information
|
IXYS Corporation
|
| AP01L60AT10 |
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness effectiveness
|
Advanced Power Electronics Corp.
|
| AP2305BGN-HF |
Advanced Power MOSFETs
|
TY Semiconductor Co., Ltd
|
| AP2312GN |
Capable of 2.5V gate drive
Advanced Power MOSFETs
|
TY Semiconductor Co., Ltd
|
| IXFH75N10Q IXFT75N10Q |
Discrete MOSFETs: HiPerFET Power MOSFETS
HIPER FET POWER MOSFETS Q CLASS
|
IXYS[IXYS Corporation]
ETC
|
| IXFK27N80 IXFK25N80 IXFN27N80 IXFN25N80 |
CAP,Polypropylene,60uF,10-% Tol,10 % Tol
HiPerFETTM Power MOSFETs
MOSFET with FAST Intrinsic Diode
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS[IXYS Corporation]
|
| IXFR24N50 IXFR26N50 |
Discrete MOSFETs: HiPerFET Power MOSFETS
HIPERFET POWER MOSFETS ISOPLUS247 (ELECTRICALLY ISOLATED BACK SURFACE)
|
IXYS Corporation
|
| IXFN180N20 |
Discrete MOSFETs: HiPerFET Power MOSFETS
N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电00V,导通电0mΩ的N沟道增强型HiPerFET功率MOSFET)
HiPerFET Power MOSFETs Single Die MOSFET
|
IXYS Corporation
|
| IXFN26N90 IXFN25N90 IXFN-26N90 IXFN-25N90 |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFETTM Power MOSFETs Single Die MOSFET
HiPerFET Power MOSFETs Single Die MOSFET 25 A, 900 V, 0.33 ohm, N-CHANNEL, Si, POWER, MOSFET
|
http://
IXYS[IXYS Corporation]
IXYS, Corp.
|
| IXFN44N60 |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFET Power MOSFETs Single Die MOSFET
|
IXYS[IXYS Corporation]
|
