| PART |
Description |
Maker |
| 1SS398 |
Diode Silicon Epitaxial Planar Diode High Voltage High Speed Switching Applications
|
TOSHIBA
|
| BAW56S Q62702-A1253 SIEMENSAG-Q62702-A1253 |
Silicon Switching Diode Array (For high-speed switching applications Common anode) 4 ELEMENT, SILICON, SIGNAL DIODE From old datasheet system
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
| BAS70-07W BAS7007W Q62702-A1186 |
Silicon Schottky Diode (General-purpose diode for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing) From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
| IMN10 |
Switching Diode Ultra high speed switching High reliability.
|
Rohm
|
| RM50HG-12S RM50HG-12S01 |
Fast Recovery Diode Modules, F Series (for IGBT speed switching) FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE NON-INSULATED TYPE
|
Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
|
| RM100C1A-XXF RM100CA/C1A-XXF |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE Fast Recovery Diode Modules, F Series (for Bipolar speed switching)
|
Mitsubishi Electric Corporation
|
| BAW56U |
General Purpose Diodes - Silicon Switching Diode Array for high-speed switching
|
Infineon
|
| GDMBD2004 |
The GDMBD2004 is designed for ultra high speed switching SURFACE MOUNT,SWITCHING DIODE
|
E-Tech Electronics LTD GTM CORPORATION
|
| Q62702-A693 BAV74 |
From old datasheet system Silicon Switching Diode Array (For high-speed switching Common cathode)
|
SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
| 1SS426 |
Switching diode Ultra-High Speed Switching Applications
|
Toshiba Semiconductor
|
| BAV99W Q62702-A1051 |
From old datasheet system Silicon Switching Diode Array (Connected in series For high speed switching applications)
|
Siemens Semiconductor Group Infineon
|
| RD0506T-H RD0506T-TL-H RD0506T12 ENA1574B |
Diffused Junction Silicon Diode Low VF . High-Speed Switching Diode
|
Sanyo Semicon Device
|