| PART |
Description |
Maker |
| RM400HV-34S |
CAP CER 22000PF 10% 50V X8R 0805
HIGH SPEED SWITCHING USE INSULATED TYPE
Fast Recovery Diode Modules, F Series (for IGBT speed switching)
|
Mitsubishi Electric Sem...
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| BAR74 Q62702-F704 |
From old datasheet system
Silicon Switching Diode (For high-speed switching)
|
SIEMENS[Siemens Semiconductor Group]
|
| BAV99HMFH |
Switching Diode (High speed switching) (corresponds to AEC-Q101)
|
ROHM
|
| Q62702-A693 BAV74 |
From old datasheet system
Silicon Switching Diode Array (For high-speed switching Common cathode)
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| SMBD7000 SMBD700007 MMBD7000 |
Silicon Switching Diode Array For high-speed switching applications Qualified according AEC Q101
|
Infineon Technologies AG
|
| BAV99W BAV99S BAV99B5003 |
Silicon Switching Diode
For high-speed switching applications
|
Infineon Technologies AG
|
| Q62702-A1097 BAV70S Q62702-A109 |
From old datasheet system
Silicon Switching Diode Array (For high speed switching applications Common cathode)
|
SIEMENS[Siemens Semiconductor Group]
|
| 2SK3084 EA09398 |
N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS) N通道马鞍山型（高速，大电流开关，斩波调压器，DC - DC变换器和电机驱动应用
HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS
From old datasheet system
|
Toshiba, Corp.
TOSHIBA[Toshiba Semiconductor]
|
| RD2003JN |
Diffused Junction Silicon Diode Low VF - High-Speed Switching Diode
|
Sanyo Semicon Device
|
| CMDD4448 |
SUPERminiTM HIGH SPEED SWITCHING DIODE 0.25 A, 100 V, SILICON, SIGNAL DIODE
|
Central Semiconductor, Corp.
Central Semiconductor Corp.
CENTRAL[Central Semiconductor Corp]
|
| CMHD4448 |
HIGH SPEED SWITCHING DIODE 0.25 A, 100 V, SILICON, SIGNAL DIODE
|
Central Semiconductor, Corp.
CENTRAL[Central Semiconductor Corp]
|
