| PART |
Description |
Maker |
| PP150B170 PP50B120 PP150T170 PP200R120 PP100T170 P |
Integrated IGBT Power Structures
|
ETC
|
| 7MBR15UF060 |
Power Integrated Module 15 A, 600 V, N-CHANNEL IGBT
|
Fuji Electric Holdings Co., Ltd.
|
| MIG25Q906H MIG25Q906HA |
Integrated IGBT Module Silicon N-Channel IGBT
|
Toshiba
|
| MIG20J906H MIG20J906HA |
Integrated IGBT Module Silicon N-Channel IGBT
|
Toshiba
|
| SKIIP82ANB15T1 |
Miniskiip 8 Semikron Integrated Intelligent Power 3-phase Bridge Rectifier Igbt Braking Chopper
|
Semikron
|
| CM600HA-5F |
HIGH POWER SWITCHING USE INSULATED TYPE
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| SGL160N60UFD SGL160N60UFDTU |
240 x 320 pixel format (Portrait Mode), CFL Backlight available with power harness 160 A, 600 V, N-CHANNEL IGBT, TO-264AA
Ultrafast IGBT
Discrete, High Performance IGBT with Diode
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| CR8PM-12 CR8PM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
MITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| IRS2332JTRPBF IRS2330D |
High Voltage High Speed power MOSFET and IGBT Driver. Compatible down to 3.3V Logic. Deadtime 0.7us.
High Voltage High Speed power MOSFET and IGBT Driver with Integrated Bootstrap Diode. Compatible down to 3.3V Logic. Deadtime 2.0us.
|
International Rectifier
|
| MGD633 |
IGBT(integrated FRD)
|
Sanken
|
| BSM75GD120DN2 075D12N2 C67070-A2516-A67 |
IGBT Power Module (Solderable Power module 3-phase full-bridge Including fast free-wheel diodes) 103 A, 1200 V, N-CHANNEL IGBT
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
