| PART |
Description |
Maker |
| EDI2DL32256V EDI2DL32256V35BC EDI2DL32256V40BC EDI |
TMS320C6202. TMS320C6203. TMS320C6204. TMS320C6 Families
x32 Fast Synchronous SRAM
256Kx32 Synchronous Pipline Burst SRAM 3.3V(3.3V,4.0ns,256Kx32同步流水线脉冲静态RAM)
256Kx32 Synchronous Pipline Burst SRAM 3.3V(3.3V,3.5ns,256Kx32同步流水线脉冲静态RAM)
256Kx32 Synchronous Pipline Burst SRAM 3.3V(3.3V,3.8ns,256Kx32同步流水线脉冲静态RAM)
|
WEDC[White Electronic Designs Corporation]
|
| EDI2DL32256V |
256Kx32 Synchronous Pipline Burst SRAM 3.3V
|
White Electronic Design...
|
| K7A203600 K7A203600A K7A203600B-QCI14 |
64K x 36-Bit Synchronous Pipelined Burst SRAM Rev. 2.0 (Dec. 1999)
64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM
64Kx36-Bit Synchronous Pipelined Burst SRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| GS8321ZV36E-250I GS8321ZV36E-225I GS8321ZV36E-133 |
Octal 16-/12-Bit Rail-to-Rail DACs with 10ppm/C Max Reference; Package: 20-TSSOP; Temperature Range: 0°C to 70°C
36Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 36 ZBT SRAM, 8.5 ns, PBGA165
36Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 36 ZBT SRAM, 8 ns, PBGA165
36Mb Pipelined and Flow Through Synchronous NBT SRAM 2M X 18 ZBT SRAM, 8.5 ns, PBGA165
36Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 32 ZBT SRAM, 6.5 ns, PBGA165
|
GSI Technology, Inc.
|
| IS61LV6464 |
SYNCHRONOUS STATIC RAM, Pipelined Synchronous SRAM
|
ICSI
|
| K7A803601A K7A801801A |
256Kx36Bit Synchronous Pipelined Burst SRAM Data Sheet
512Kx18-Bit Synchronous Pipelined Burst SRAM Data Sheet
|
Samsung Electronic
|
| GS8640Z18T-V GS8640Z18T-250V GS8640Z18T-250IV |
72Mb Pipelined and Flow Through Synchronous NBT SRAM 72Mb流水线和流量，通过同步唑的SRAM
72Mb Pipelined and Flow Through Synchronous NBT SRAM 4M X 18 ZBT SRAM, 6.5 ns, PQFP100
|
GSI Technology, Inc.
|
| WS256K32N-30HMA WS256K32-20G4C WS256K32-20G4CA WS2 |
256Kx32 SRAM Module(256Kx32静态RAM模块（存取时0ns
256Kx32 SRAM Module(256Kx32静态RAM模块（存取时5ns
|
White Electronic Designs Corporation
ETC[ETC]
List of Unclassifed Manufacturers
|
| IDT71V2576S IDT71V2576S133BG IDT71V2576S133BGI IDT |
3.3V 128K x 36 Synchronous PipeLined Burst SRAM w/2.5V I/O
3.3V 256K x 18 Synchronous PipeLined Burst SRAM w/2.5V I/O
128K X 36/ 256K X 18 3.3V Synchronous SRAMs 2.5V I/O/ Pipelined Outputs/ Burst Counter/ Single Cycle Deselect
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect
128K X 36 256K X 18 3.3V Synchronous SRAMs 2.5V I/O Pipelined Outputs Burst Counter Single Cycle Deselect
|
IDT[Integrated Device Technology]
|
| IDT70V9189L9PFI IDT70V9179L12PFI IDT70V9179L6PFI I |
64K x 9 Sync, 3.3V Dual-Port RAM, PipeLined/Flow-Through
HIGH-SPEED 3.3V 64/32K x 9 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM
|
IDT[Integrated Device Technology]
|
| IDT70T9159L12PF1 IDT70T9159L7BF1 IDT70T9159L9PF1 I |
HIGH-SPEED 2.5V 16/8K X 9 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM 高.5V6/8K × 9同步流水线双端口静态RAM
HIGH-SPEED 2.5V 16/8K X 9 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM 16K X 9 DUAL-PORT SRAM, 25 ns, PBGA100
|
Integrated Device Technology, Inc.
|
| GS8161Z18BT-150I GS8161Z18BGT-150 GS8161Z32BD-150 |
18Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 18 ZBT SRAM, 7.5 ns, PQFP100
18Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 32 ZBT SRAM, 7.5 ns, PBGA165
18Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 18 ZBT SRAM, 7.5 ns, PBGA165
|
GSI Technology, Inc.
|
