| PART |
Description |
Maker |
| CXD8862Q |
C-MOS GATE ARRAY
|
ETC
|
| UPD65321 UPD65322 UPD65323 UPD65941GB-XXX-YEU UPD6 |
Channel-less CMOS gate array employing 0.25 um technology (CMOS-10HD)
Channelless type CMOS gate array using 0.35um process
|
NEC
|
| TLP591B07 TLP591B |
Telecommunication Programmable Controllers MOS Gate Driver MOS FET Gate Driver
|
Toshiba Semiconductor
|
| MMC4025 MMC4001 MMC4002 MMC4000 |
Quad 2-input NOR gate
Dual 4-input NOR gate
Dual 3-input NOR gate plus inverter
Triple 3-input NOR gate
NOR GATES COMPLEMENTARY MOS INTEGRATED CIRCUITS
|
Microelectronica
Micro Electronics
|
| UPD65530 UPD65510 UPD65565 UPD65567 UPD65507 |
ANACONDA LT TRANSCEIVER
CMOS Gate Array.Embedded Array Ver.2.0 for Package | Design Manual[05/2003] CMOS门阵列Array.Embedded的包版本2.0 |设计手册[05/2003]
|
TE Connectivity, Ltd.
Vishay Intertechnology, Inc.
|
| BF994SA BF994SB BF994S BF994 |
From old datasheet system
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
CAP CER 47PF 50V 5% C0G 0603
|
Vishay Telefunken
VISAY[Vishay Siliconix]
Vishay Intertechnology,Inc.
|
| APT5015BLC |
POWER MOS VI 500V 32A 0.150 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs 电源MOS VITM是一种低栅极电荷新一代高压N沟道增强型功率MOSFET
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Advanced Power Technology, Ltd.
|
| APT5014B2LC APT5014LLC APT5014 |
POWER MOS VI 500V 37A 0.140 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. 电源MOS VITM是一种低栅极电荷新一代高压N沟道增强型功率MOSFET
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Advanced Power Technology, Ltd.
|
| CXD8095Q |
CMOS Gate Array
|
ETC
|
| HG62E22 HG62E58 HG62E101 HG62E11 HG62E130 HG62E15 |
CMOS GATE ARRAY
|
HITACHI[Hitachi Semiconductor]
|
