| PART |
Description |
Maker |
| TGA2513 |
Wideband LNA
|
TriQuint Semiconductor
|
| HMC-C001 |
WIDEBAND LNA MODULE, 2 - 20 GHz
|
Hittite Microwave Corporation
|
| ZAMP001 ZAMP001H6TA ZAMP001H6TC |
800-2500MHz MMIC WIDEBAND AMPLIFIER LNA/ 18dB Gain/ Low Current
800-2500MHz MMIC WIDEBAND AMPLIFIER LNA, 18dB Gain, Low Current
|
ZETEX[Zetex Semiconductors]
|
| TQ3M31 |
832-894 MHz & 1930-1990 MHz Dual Band LNA
From old datasheet system
Dual Band LNA: 2.8V, Cellular and PCS Band CDMA/AMPS LNA IC
|
TRIQUINT[TriQuint Semiconductor]
TriQuint Semiconductor,Inc.
|
| STB7002TR STB7002 7002 |
1.8 GHZ THREE GAIN LEVEL LNA
1.8GHz THREE GAIN LEVEL LNA
1805 MHz - 1880 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
|
ST Microelectronics
http://
STMicroelectronics
意法半导
|
| HA7-2840883 FN3594 HA1-2840_883 HA1-2840883 HA7-28 |
From old datasheet system
Very High Slew Rate Wideband Operational Amplifier
Very High Slew Rate/ Wideband Operational Amplifier
Very High Slew Rate,
Wideband Operational Amplifier(高转换率、宽带运算放大器)
Very High Slew Rate, Wideband Operational Amplifier 甚高摆率，宽带运算放大器
Very High Slew Rate, Wideband Operational Amplifier OP-AMP, 6000 uV OFFSET-MAX, 500 MHz BAND WIDTH, CDIP14
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| BGA425 Q62702-G0058 Q62702-S497 Q62702-S633 Q62702 |
Si-MMIC-Amplifier in SIEGET 25-Technologie (Multifunctional casc. 50 Ω block LNA / MIX Unconditionally stable)
SI-MMIC-AMPLIFIER IN SIEGET 25-TECHNOLOGIE (MULTIFUNCTIONAL CASC. 50 ヘ BLOCK LNA / MIX UNCONDITIONALLY STABLE)
From old datasheet system
Si-MMIC-Amplifier in SIEGET 25-Technologie
Si-MMIC-Amplifier in SIEGET 25-Technologie (Multifunctional casc. 50 block LNA / MIX Unconditionally stable)
Si-MMIC-Amplifier in SIEGET 25-Technologie (Multifunctional casc. 50 block LNA / MIX Unconditionally stable)
SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level) SIPMOS小信号晶体管P通道增强模式的逻辑电平
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| MW4IC2020 MW4IC2020D MW4IC2020GMBR1 MW4IC2020MBR1 |
GSM/GSM EDGE, CDMA 1.805–1.99 GHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifier
MW4IC2020MBR1, MW4IC2020GMBR1 GSM/GSM EDGE, CDMA, 1805-1990 MHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifiers
RF LDMOS Wideband Integrated Power Amplifiers
|
Freescale (Motorola)
MOTOROLA[Motorola, Inc]
|
| BFR106 |
NPN 5GHz wideband transistor(NPN 5G赫兹 宽带晶体
NPN 5 GHz wideband transistor
|
NXP Semiconductors
Philips Semiconductors
|
| BFR93 |
NPN 5GHz wideband transistor(NPN 5G赫兹 宽带晶体
NPN 5 GHz wideband transistor
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| BFG198 |
NPN 8GHz wideband transistor(NPN 8G赫兹 宽带晶体
NPN 8 GHz wideband transistor
|
NXP
Philips Semiconductors
|
| BFS520 |
NPN 9GHz wideband transistor(NPN 9G赫兹 宽带晶体
NPN 9 GHz wideband transistor
|
Philips Semiconductors
NXP Semiconductors
|
