| PART |
Description |
Maker |
| TC58NVG6T2FTA00 |
64 GBIT (8G X 8 BIT) CMOS NAND E2PROM
|
Toshiba
|
| TC58NVG5D2FTA00 |
32 GBIT (4G X 8 BIT) CMOS NAND E2PROM
|
Toshiba
|
| TC58NVG0S3AFT00 |
1 GBit CMOS NAND EPROM
|
Toshiba
|
| NAND08GW3B2A NAND04GW3B2AN1E NAND08GW3B2AN1E NAND0 |
4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories
|
Numonyx B.V
|
| NAND08GW3B2AN1E NAND08GW3B2AN1F NAND04GW3B2AN1E NA |
4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories
|
STMICROELECTRONICS[STMicroelectronics]
|
| NAND01GR3B2BN1E NAND01GW3B2BN6E NAND01GW3B2BZA1E N |
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
| NAND08GW3B2CN1E NAND08GW3B2CN1F NAND08GW3B2CN6E NA |
4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories
|
Numonyx B.V
|
| S34ML16G2 |
16-Gbit, 4-Bit ECC, ×8 I/O, 3 V VCC NAND Flash for Embedded
|
Cypress Semiconductor
|
| TH58NS100DC |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 - GBIT (128M X 8 BITS) CMOS NAND E2PROM ( 128M BYTE SmartMediaTM )
|
Toshiba Semiconductor
|
| AM27X128 AM27X128-120JC AM27X128-120JI AM27X128-12 |
CMOS Quad 2-Input NAND Schmitt Triggers 14-CDIP -55 to 125 16K X 8 OTPROM, 90 ns, PDIP28
CMOS Quad 2-Input NAND Schmitt Triggers 14-SOIC -55 to 125 128千比特（16亩8位）的CMOS ExpressROM装置
CMOS Quad 2-Input NAND Schmitt Triggers 14-SOIC -55 to 125 16K X 8 OTPROM, 150 ns, PDIP28
CAPACITOR .0033UF UV BOX TYPE 16K X 8 OTPROM, 150 ns, PQCC32
CMOS Quad 2-Input NAND Schmitt Triggers 14-TSSOP -55 to 125
128 Kilobit (16 K x 8-Bit) CMOS ExpressROM Device
|
SPANSION LLC
PROM
Advanced Micro Devices, Inc.
AMD[Advanced Micro Devices]
|
| NAND02GW4B2DN6E NAND02GW4B2DN6F NAND02G-B2D NAND02 |
2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories
|
Numonyx B.V
|
