| PART |
Description |
Maker |
| SSF2715 |
Extremely high dv/dt capability
|
Silikron Semiconductor Co.,LTD.
|
| STF28N60DM2 |
Extremely high dv/dt ruggedness
|
STMicroelectronics
|
| SSF8N60 |
Extremely high dv/dt capability
|
Silikron Semiconductor ...
|
| STF24N60DM2 |
Extremely high dv/dt ruggedness
|
STMicroelectronics
|
| STW70N60DM2 |
Extremely high dv/dt ruggedness
|
STMicroelectronics
|
| FDC6318P |
High performance trench technology for extremely low R
|
TY Semiconductor Co., Ltd
|
| CES2314 |
High dense cell design for extremely low RDS(ON).
|
TY Semiconductor Co., Ltd
|
| CES2313 |
High dense cell design for extremely low RDS(ON).
|
TY Semiconductor Co., Ltd
|
| SI2301 |
High dense cell design for extremely low RDS(ON)
|
MAKO SEMICONDUCTOR CO.,...
|
| CES2313A |
High dense cell design for extremely low RDS(ON).
|
TY Semiconductor Co., Ltd
|
| CES2308 |
High dense cell design for extremely low RDS(ON).
|
TY Semiconductor Co., Ltd
|
| CZTA9610 CZTA96-15 |
SURFACE MOUNT EXTREMELY HIGH VOLTAGE PNP SILICON TRANSISTOR
|
Central Semiconductor Corp
Central Semiconductor C...
|
