| PART |
Description |
Maker |
| HY5MS7B2BLFP-6 |
16M X 32 DDR DRAM, PBGA90
|
HYNIX SEMICONDUCTOR INC
|
| MT46H8M16LFBF-54K MT46H4M32LFB5-5K |
8M X 16 DDR DRAM, 5 ns, PBGA60 8 X 9 MM, GREEN, PLASTIC, VFBGA-60
4M X 32 DDR DRAM, 5 ns, PBGA90
|
NEC, Corp.
|
| HY5PS56821LF-C4 HY5PS56821LF-C5 HY5PS56821LF-E3 HY |
256Mb DDR2 SDRAM
64M X 4 DDR DRAM, PBGA60
16M X 16 DDR DRAM, PBGA84
|
HYNIX SEMICONDUCTOR INC
|
| K4M51323LC K4M51323LC-SDL_F K4M51323LC-SDN_G K4M51 |
16M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90
Mobile-SDRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| V827316K04S V827316K04SXTG-B1 |
16M X 72 DDR DRAM MODULE, 0.8 ns, DMA184
2.5 VOLT 16M x 72 HIGH PERFORMANCE UNBUFFERED ECC DDR SDRAM MODULE
|
MOSEL-VITELIC
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic Corp
|
| K4M513233E K4M513233E-F1H K4M513233E-F1L K4M513233 |
16M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90
4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA 4米32Bit的4银行0FBGA移动SDRAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| HYMD2166466 HYMD216646L6 HYMD2166466-H |
16Mx64|2.5V|K/H/L|x4|DDR SDRAM - Unbuffered DIMM 128MB
16M X 64 DDR DRAM MODULE, 0.75 ns, DMA184
|
HYNIX SEMICONDUCTOR INC
|
| IS42SM32160C-75BLI IS42SM32160C-75BL-TR IS42SM3216 |
16M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90
512Mb Mobile Synchronous DRAM
|
天津新技术产业园区管理委员会
INTEGRATED SILICON SOLUTION INC
Integrated Silicon Solu...
|
| IS43R16160A-75T |
16M X 16 DDR DRAM, 0.75 ns, PDSO66
|
INTEGRATED SILICON SOLUTION INC
|
| HYB18T256160AF-2.5 |
16M X 16 DDR DRAM, 0.4 ns, PBGA84
|
QIMONDA AG
|
| HY5DU561622ELTP-L |
16M X 16 DDR DRAM, 0.75 ns, PDSO66
|
HYNIX SEMICONDUCTOR INC
|
| EDE2516AASE-AE-E EDE2516AASE-DF-E |
16M X 16 DDR DRAM, 0.5 ns, PBGA84
16M X 16 DDR DRAM, 0.45 ns, PBGA84
|
ELPIDA MEMORY INC
|
