| PART |
Description |
Maker |
| FDMS86252L |
150V N-Channel Shielded Gate PowerTrenchMOSFET
|
Fairchild Semiconductor
|
| FDC8601 |
N-Channel Shielded Gate PowerTrench MOSFET
|
Fairchild Semiconductor
|
| FDMC86106LZ13 |
N-Channel Shielded Gate PowerTrench MOSFET 100 V, 7.5 A, 103 mΩ
|
Fairchild Semiconductor
|
| STS8DNF3LL |
DUAL N-CHANNEL 30V - 0.017 OHM - 8A SO-8 LOW GATE CHARGE STRIPFET II POWER MOSFET
DUAL N-CHANNEL 30V - 0.017 ohm - 8A SO-8 LOW GATE CHARGE STripFET II POWER MOSFET
DUAL N-CHANNEL 30V - 0.017 ohm - 8A SO-8 LOW GATE CHARGE STripFET⑩ II POWER MOSFET
DUAL N-CHANNEL 30V - 0.017 ohm - 8A SO-8 LOW GATE CHARGE STripFETII POWER MOSFET 双N沟道30V 0.017欧姆- 8A条的SO - 8低栅极电荷STripFET⑩二功率MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
STMicroelectronics N.V.
|
| STB90NF03L STB90NF03LT4 |
N-CHANNEL 30V 0.0056 OHM 90A D2PAK LOW GATE CHARGE STRIPFET POWER MOSFET
N-CHANNEL 30V 0.0056 OHM 90A D2PAK LOW GATE CHARGE STRIPFET POWER MOSFET
N-CHANNEL 30V - 0.0056ohm - 90A D2PAK LOW GATE CHARGE STripFET⑩ POWER MOSFET
N-CHANNEL 30V - 0.0056ohm - 90A D2PAK LOW GATE CHARGE STripFET POWER MOSFET
Niobium Oxide Capacitor; Capacitor Type:Low ESR; Voltage Rating:6.3VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:68uF; Capacitance
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| 142-06J08SL 144-06J12L 143-16J12SL 142-06J08L 143- |
RF inductor, tunable, Carbonyl J core, shielded, RoHS SHIELDED, 0.22 uH - 0.248 uH, VARIABLE INDUCTOR
RF inductor, tunable, Carbonyl J core, RoHS UNSHIELDED, 0.193 uH - 0.306 uH, VARIABLE INDUCTOR
RF inductor, tunable, Carbonyl J core, shielded, RoHS SHIELDED, 0.638 uH - 0.801 uH, VARIABLE INDUCTOR
RF inductor, tunable, Carbonyl J core, RoHS UNSHIELDED, 0.275 uH - 0.355 uH, VARIABLE INDUCTOR
RF inductor, tunable, Carbonyl J core, shielded, RoHS SHIELDED, 0.315 uH - 0.423 uH, VARIABLE INDUCTOR
RF inductor, tunable, Carbonyl J core, shielded, RoHS SHIELDED, 0.115 uH - 0.121 uH, VARIABLE INDUCTOR
RF inductor, tunable, Carbonyl J core, shielded, RoHS SHIELDED, 0.382 uH - 0.422 uH, VARIABLE INDUCTOR
RF inductor, tunable, Carbonyl J core, RoHS UNSHIELDED, 0.391 uH - 0.493 uH, VARIABLE INDUCTOR
RF inductor, tunable, Carbonyl J core, shielded, RoHS SHIELDED, 0.355 uH - 0.477 uH, VARIABLE INDUCTOR
RF inductor, tunable, Carbonyl J core, shielded, RoHS SHIELDED, 0.693 uH - 0.846 uH, VARIABLE INDUCTOR
|
Coilcraft, Inc.
COILCRAFT INC
|
| NE41137 |
N-Channel GaAs Dual Gate MES FET
N-CHANNEL GAASDUAL-GATE MESFET
|
California Eastern Laboratories
NEC[NEC]
|
| STS11NF30L STS11NF30L07 |
N-channel 30V - 0.0085Ω - 11A SO-8 Low gate charge STripFET II Power MOSFET
N-channel 30V - 0.0085ヘ - 11A SO-8 Low gate charge STripFET⑩ II Power MOSFET
|
STMicroelectronics
|
| D1029UK |
METAL GATE RF SILICON FET 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
|
| AP9928GEM |
7.3 A, 20 V, 0.023 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Capable of 2.5V gate drive, Surface mount package
|
Advanced Power Electronics Corp.
|
| DS1608C-102ML DS1608C-103ML DS1608C-104ML DS1608C- |
SMT Power Inductors
Power inductor, shielded, 20% tol, SMT, RoHS 1 ELEMENT, 8.2 uH, GENERAL PURPOSE INDUCTOR, SMD
Power inductor, shielded, 20% tol, SMT, RoHS 1 ELEMENT, 4700 uH, GENERAL PURPOSE INDUCTOR, SMD
Power inductor, shielded, 20% tol, SMT, RoHS 1 ELEMENT, 47 uH, GENERAL PURPOSE INDUCTOR, SMD
Power inductor, shielded, 20% tol, SMT, RoHS 1 ELEMENT, 6800 uH, GENERAL PURPOSE INDUCTOR, SMD
Power inductor, shielded, 20% tol, SMT, RoHS 1 ELEMENT, 2200 uH, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 10 uH, GENERAL PURPOSE INDUCTOR, SMD
High reliability part. For price, availability and ordering contact Coilcraft Critical Products, cp@coilcraft.com
1 ELEMENT, 10000 uH, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 100 uH, GENERAL PURPOSE INDUCTOR, SMD
|
Coilcraft lnc.
Coilcraft, Inc.
COILCRAFT INC
|
|
