| PART |
Description |
Maker |
| TSF20U60C TSF20U45C |
(TSF20U45C / TSF20U60C) Trench MOS Barrier Schottky Rectifier
|
Taiwan Semiconductor
|
| 60CTTN015 |
15V 60A Trench Schottky Discrete Diode in a TO-220 package
TRENCH SCHOTTKY RECTIFIER
|
IRF[International Rectifier]
|
| IRF7328PBF IRF7328PBF10 IRF7328TRPBF IRF7328PBF-15 |
Trench Technology
Trench Technology Ultra Low On-Resistance
|
International Rectifier
|
| FGA25N120ANTDTU |
1200V, 25A, NPT Trench IGBT
1200 V, 25 A NPT Trench IGBT
|
Fairchild Semiconductor
|
| IGB15N60T |
Low Loss IGBT in Trench and Fieldstop technology 在戴低损失和场终止IGBT技
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...
|
INFINEON[Infineon Technologies AG]
|
| CM50TU-24F |
Trench Gate Design Six IGBTMOD?/a> 50 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD⑩ 50 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD50 Amperes/1200 Volts 50 A, 1200 V, N-CHANNEL IGBT
|
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
|
| FGH50T65UPD |
650V, 50A, Field Stop Trench IGBT
650 V, 50 A Field Stop Trench IGBT
|
Fairchild Semiconductor
|
| FDB86360-F085 FDB86360F085 |
N-Channel Power Trench MOSFET 80V, 110A, 1.8mOhms
N-Channel Power Trench? MOSFET
|
Fairchild Semiconductor
|
| CM75TJ-24F |
Trench Gate Design Six IGBTMOD?/a> 75 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD⑩ 75 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD 75 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD75 Amperes/1200 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| CM600HA-5F |
Trench Gate Design Single IGBTMOD600 Amperes/250 Volts
Trench Gate Design Single IGBTMOD 600 Amperes/250 Volts
Trench Gate Design Single IGBTMOD⑩ 600 Amperes/250 Volts
|
POWEREX[Powerex Power Semiconductors]
|
