| PART |
Description |
Maker |
| BAV19 BAV21 BAV20 BAV19-TP |
500mW Small Signal Diodes 120 to 250 Volts
0.2 A, 120 V, SILICON, SIGNAL DIODE, DO-35
|
Micro Commercial Components
|
| BAV21W-V-G-08 |
0.2 A, 250 V, SILICON, SIGNAL DIODE
|
VISHAY SEMICONDUCTORS
|
| BAV23SS62Z |
0.2 A, 250 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB
|
FAIRCHILD SEMICONDUCTOR CORP
|
| BAV23S-7-F BAV23C-7-F BAV23A-7-F |
SURFACE MOUNT SWITCHING DIODE 0.4 A, 250 V, 2 ELEMENT, SILICON, SIGNAL DIODE
|
Diodes Inc.
Diodes, Inc.
|
| BAS21W-7-F BAS20W-7-F |
SURFACE MOUNT FAST SWITCHING DIODE 0.2 A, 250 V, SILICON, SIGNAL DIODE
|
Diodes Inc.
Diodes, Inc.
|
| BAS21HT1G |
High Voltage Switching Diode 0.2 A, 250 V, SILICON, SIGNAL DIODE
|
ON Semiconductor
|
| MJ21196 MJ21195 ON1990 |
From old datasheet system
16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS 250 WATTS
|
ONSEMI[ON Semiconductor]
|
| MJ10021 ON1972 MJ10020 |
From old datasheet system
60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS 250 WATTS
|
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola, Inc]
|
| BUV22_D ON0258 BUV22 |
SITCHMODE Series NPN Silicon Power Transistor
From old datasheet system
40 AMPERES NPN SILICON POWER METAL TRANSISTOR 250 VOLTS 250 WATTS
|
ON Semiconductor
Motorola, Inc
|
| UMA5817 UMA5818 UMA5819 MA5817 MVUMA5819 MQUMA5817 |
1 A, 40 V, SILICON, SIGNAL DIODE
ULTRAMITTE SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS 1 A, 30 V, SILICON, SIGNAL DIODE
1 A, 20 V, SILICON, SIGNAL DIODE
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
MICROSEMI CORP-SCOTTSDALE
|
|
