| PART |
Description |
Maker |
| WPT2N31-6TR |
Single, PNP, -30V, -3A, Power Transistor with 20V N-MOSFET
|
TY Semiconductor Co., Ltd
TY Semiconductor Co., L...
|
| CSB772P CSB772R CSB772 CSB772E CSB772Q |
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSD882
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSD882E
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSD882R
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSD882Q
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSD882P
Audio Frequency Power Amplifier and Low Speed Switching
|
CDIL[Continental Device India Limited]
|
| NTMS4705N |
Power MOSFET 30V, 12A, Single N Channel, SO8(30V, 12A锛????OSFET)
|
ON Semiconductor
|
| NTMFS4120N |
Power MOSFET 30V, 31A, Single N Channel, SO8 Flat Lead(30V, 31A锛????OSFET)
|
ON Semiconductor
|
| AM29F400B-75FC AM29F400B-75SC AM29F400B-75EC AM29F |
60V Single N-Channel HEXFET Power MOSFET in a TO-247AC package; Similar to IRFP064V with Lead Free Packaging
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRFZ24N with Standard Packaging
100V Single N-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRFU120N with Lead Free Packaging
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRF1010EL with Standard Packaging
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF3710ZS with Lead Free Packaging
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRFZ46NL with Lead Free Packaging
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; Similar to the IRF1010N with Lead-Free Packaging.
30V Single N-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRFU3709 with Lead Free Packaging
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7466 with Lead Free Packaging
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package; A IRFR3412 with Standard Packaging
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRL2505S with Standard Packaging
100V Single N-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRFU3911 with Lead Free Packaging
40V Single N-Channel Automotive HEXFET Power MOSFET in a TO-220AB package; Similar to IRF4104 with Lead Free Packaging x8/x16闪存EEPROM
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package; Similar to IRLR3303 with Lead Free Packaging x8/x16闪存EEPROM
x8/x16 Flash EEPROM x8/x16闪存EEPROM
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRLZ24N with Standard Packaging x8/x16闪存EEPROM
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package; Similar to IRLR7821 with Lead Free Packaging
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRF3707ZCL with Lead Free Packaging
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRL8113L with Lead Free Packaging
40V Single N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7484 with Standard Packaging
100V Single N-Channel HEXFET Power MOSFET in a I-Pak package; A IRFU3910 with Standard Packaging
100V Single N-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRFU3910 with Lead Free Packaging
80V Single N-Channel HEXFET Power MOSFET in a D-Pak package; Similar to IRLR2908 with Lead Free Packaging
|
Rochester Electronics, LLC
Amphenol, Corp.
Advanced Micro Devices, Inc.
|
| IRF7603 |
30V Single N-Channel HEXFET Power MOSFET in a Micro 8 package
Power MOSFET(Vdss=30V, Rds(on)=0.035ohm)
|
International Rectifier
|
| ADY27IV AL100 AL102 AL103 ASZ17 ASZ15 ASZ16 ASZ18 |
TRANSISTOR | BJT | PNP | 130V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | PNP | 130V V(BR)CEO | 6A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 8A I(C) | TO-3
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 8A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | PNP | 26V V(BR)CEO | 4A I(C) | TO-66VAR
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 600MA I(C) | TO-8
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | TO-8
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 600MA I(C) | TO-8
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 4A I(C) | TO-3
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 20A I(C)
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 6A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 6A I(C) | TO-3
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 6A I(C) | TO-3
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 3A I(C) | TO-3
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 3.5A I(C) | TO-3 晶体管|晶体管|进步党| 30V的五（巴西）总裁| 3.5AI（丙）|
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-3 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 3A条一c）|
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 10A I(C) | TO-41 晶体管|晶体管|进步党| 45V的五（巴西）总裁| 10A条一（c）|1
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 8A I(C) | TO-8 晶体管|晶体管|进步党| 45V的五（巴西）总裁| 8A条一（c）|
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 3A I(C) | TO-3 晶体管|晶体管|进步党| 45V的五（巴西）总裁| 3A条一（c）|
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 25A I(C) 晶体管|晶体管|进步党| 60V的五（巴西）总裁|5A一（c
|
Cypress Semiconductor, Corp.
Vicor, Corp.
Atmel, Corp.
Advanced Analogic Technologies, Inc.
EPCOS AG
|
| 2SA2124 2SA2124-TD-E |
Bipolar Transistor -30V, -2A, Low VCE(sat), PNP Single PCP
|
ON Semiconductor
|
| IRL8113 IRL8113L IRL8113S |
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package
30V Single N-Channel HEXFET Power MOSFET in a D2Pak package
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
|
IRF[International Rectifier]
|
| NTMFS4709N |
Power MOSFET 30V, 94A, Single N Channel, SOIC8 FL(30V, 94A，功MOSFET)
|
ON Semiconductor
|
