| PART |
Description |
Maker |
| PT10116 |
DIODE MODULE 100A/1200V/1600V 3 PHASE, 100 A, 1600 V, SILICON, BRIDGE RECTIFIER DIODE
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Nihon Inter Electronics, Corp.
|
| PCHMB100B12 |
IGBT MODULE Chopper 100A 1200V
|
NIEC[Nihon Inter Electronics Corporation]
|
| PT10116 PT10112 |
DIODE MODULE 100A/1200V/1600V
|
NIEC[Nihon Inter Electronics Corporation]
|
| PD100F12 |
FRD MODULE - 100A/1200V/trr:250nsec
|
Nihon Inter Electronics Corporation
|
| 6MBP100VEA120-50 |
IGBT MODULE (V series) 1200V / 100A / IPM
|
Fuji Electric
|
| MIMMG100DR120B |
1200V 100A IGBT Module RoHS Compliant
|
Micross Components
|
| MIMMG100SR120UZA |
1200V 100A IGBT Module RoHS Compliant
|
Micross Components
|
| A170 A170R A170D A170P A170PB A170PD A170PE A170N |
600V, 100A general purpose single diode
800V, 100A general purpose single diode
SILICON RECTIFIER
Silicon Recitifer
1000V, 100A general purpose single diode
1200V, 100A general purpose single diode
1400V, 100A general purpose single diode
1500V, 100A general purpose single diode
|
POWEREX[Powerex Power Semiconductors]
Powerex Power Semiconductor...
|
| IRG7U100HF12A |
1200V 100A Ultra Fast IGBT Half-Bridge module packaged in POWIR 62 package
|
International Rectifier, Corp.
|
| X9315 X9315WSZ-2.7 X9315TM X9315TM-2.7 X9315TMI X9 |
:SEMITOP 3; Centres, fixing:52.5mm; Current, Ic av:40A; Current, Ic continuous b max:32A; RoHS Compliant: Yes
max:2.1V; Case style:SEMITOP 4; Current, Icm pulsed:100A; Temperature, Tj RoHS Compliant: Yes
THYRISTOR MODULE, 3 PHASETHYRISTOR MODULE, 3 PHASE; Voltage, Vrrm:1600V; Case style:SEMITOP 3; Current, It rms:68A; Current, Itsm:450A; Voltage, Vgt
:SEMITOP-4; Voltage, Vceo:1200V; Voltage, Vce sat max:2.15V; Current, Ic continuous a
continuous a max:17A; Voltage, Vce sat max:2.5V; Case style:SEMITOP 3; Current, Icm RoHS Compliant: Yes
IGBT MODULE, H BRIDGE 1200VIGBT MODULE, H BRIDGE 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3.2V
IGBT MODULE, DUAL 600V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:600V; Voltage, Vce sat max:2V; Current, Ic continuous a max:54A
IGBT MODULE, CHOPPER 1200VIGBT MODULE, CHOPPER 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3V
IGBT MODULE 6 PACK 114A 1200V TRENCHIGBT MODULE 6 PACK 114A 1200V TRENCH; Transistor type:3-phase bridge inverter; Case style:SEMITOP-4; Voltage
:SEMITOP 2; Centres, fixing:38mm; Current, Ic av:23A; Current, Ic continuous b max:15A; RoHS Compliant: Yes
IGBT MODULE, 6 PACK 1200VIGBT MODULE, 6 PACK 1200V; Transistor type:IGBT; Case style:SEMITOP 3; Voltage, Vceo:1200V; Voltage, Vce sat max:2.1V
IGBT MODULE, DUAL 1200VIGBT MODULE, DUAL 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3V; Current, Ic
MOSFET MODULE, 6 PACK 75VMOSFET MODULE, 6 PACK 75V; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:100V; Case style:SEMITOP 2
RECTIFIER SCHOTTKY SINGLE 1A 70V 25A-ifsm 0.8V-vf 0.5mA-ir DO-41 5K/AMMO
DIODE SCHOTTKY SINGLE 10V 150mW 0.37V-vf 30mA-IFM 1mA-IF 1uA-IR SOT-523 3K/REEL
IGBT MODULE, DUAL 600V; Transistor type:IGBT; Case style:SEMITOP 1; Voltage, Vceo:600V; Voltage, Vce sat max:2V; Current, Ic continuous a max:30A; Current, Icm pulsed:24A; Power, Pd:1400W; Time, rise:35ns; Centres, fixing:28.5mm;
Low Noise, Low Power, 32 Taps 10K DIGITAL POTENTIOMETER, INCREMENT/DECREMENT CONTROL INTERFACE, 32 POSITIONS, PDIP8
IGBT MODULE 6 PACK 96A 600V TRENCHIGBT MODULE 6 PACK 96A 600V TRENCH; Transistor type:3-phase bridge inverter; Case style:SEMITOP-4; Current, Ic continuous a max:100A
IGBT MODULE, 6 PACK 1200VIGBT MODULE, 6 PACK 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:2.1V; Current, Ic continuous a max:22A; Current, Icm pulsed:44A; Power, Pd:1600W; Time,
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http://
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| MIMMD100E140X |
1400V 100A Rectifier Module RoHS Compliant
|
Micross Components
|
| 6MBP100RA120 |
IGBT(1200V/100A)
|
http://
FUJI[Fuji Electric]
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