| PART |
Description |
Maker |
| SBT80-06JS |
60V, 8A Rectifi er
|
Sanyo Semicon Device
|
| CPD31X |
10A / 60V Schottky Rectifier Die
|
centralsemi
|
| MJE2955 MJE2955T MJE3055T |
NPN Transistor
POWER TRANSISTORS(10A /60V /75W)
POWER TRANSISTORS(10A,60V,75W) 功率晶体管（10A条，60V5W的）
|
MOSPEC[Mospec Semiconductor]
Mospec Semiconductor, Corp.
MOSPEC SEMICONDUCTOR CORP.
|
| NSD |
Surface Mount Schottky Barrier Rectifi er Diode
|
NIC-Components Corp.
|
| MJD2955-001 MJD3055T4 |
Power 10A 60V Discrete PNP
Power 10A 60V Discrete NPN
|
ON Semiconductor
|
| AP1034 AP1038 AP1023 AP1145 AP1037 AP1022 AP1065 A |
TRANSISTOR | BJT | PNP | 275V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | PNP | 250V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 10A I(C) | TO-210AC
TRANSISTOR | BJT | PNP | 250V V(BR)CEO | 10A I(C) | TO-66
TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 10A I(C) | TO-210AC
TRANSISTOR | BJT | PNP | 170V V(BR)CEO | 10A I(C) | TO-5
TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 10A I(C) | TO-33
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 10A I(C) | TO-3 晶体管|晶体管|进步党| 120伏特五（巴西）总裁| 10A条一（c）|
|
SCHURTER AG
|
| CBRHDSH1-200 CBRLD1SERIES |
SURFACE MOUNT HIGH DENSITY 1 AMP SILICON SCHOTTKY BRIDGE RECTIFIER
1.0A, 40V thru 200V Schottky Bridge Rectifier in the HD DIP package
1.0A, 200V thru 1000V Bridge Rectifi ers
|
Central Semiconductor Corp
|
| 2SA1291 |
60V/10A High-Speed Switching Applications
|
Sanyo Semicon Device
|
| IRLZ14 IRLZ14L IRLZ14S IRLZ14SL |
Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=10A)
|
IRF[International Rectifier]
|
| MPM3003 |
TRANSISTOR,MOSFET POWER MODULE,3-PH BRIDGE,60V V(BR)DSS,10A I(D)
From old datasheet system
|
Motorola Semiconductor Products Inc
|
| TCMBR10200CT TCMBR10100CT TCMBR10150CT |
10A SCHOTTKY BARRIER DIODE Dual High Voltage Schottky Rectifier
|
Tak Cheong Electronics (Holdings) Co.,Ltd
|
