| PART |
Description |
Maker |
| BAT240A |
Silicon Schottky Diode (Rectifier Schottky diode for modem applications High reverse voltage For power supply)
|
SIEMENS A G
SIMENS
Siemens Semiconductor Group
|
| BAT60B Q62702-A1189 BAT60 Q62702-A118 |
From old datasheet system
Silicon Schottky Diode (Rectifier Schottky diode for mobile communication Low voltage high inductane For power supply
|
SIEMENS[Siemens Semiconductor Group]
|
| JANTXV1N827ATR-2 JANS1N827ATR-2 JANTXV1N827TR-2 JA |
6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-204AH
6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-213AA
|
Microsemi, Corp.
Microsemi Corporation
|
| SB063P150-W-AG SB063P150-W-AG_AL SB063P150-W-AG/AL |
Schottky Barrier Diode Wafer 63 Mils, 150 Volt, 3 Amp
|
TRANSYS Electronics Limited
|
| SB051C020-1-W-AG |
Schottky cr Barrier Diode Wafer 51 Mils, 20 Volt, 1 Amp, 0.32VF.
|
TRANSYS Electronics Limited
|
| SB073P150-W-AG SB073P150-W-AG_AL SB073P150-W-AG/AL |
Schottky Barrier Diode Wafer 73 Mils, 150 Volt, 5 Amp
|
TRANSYS Electronics Limited
|
| SB039C040-1-W-AG |
Schottky cr Barrier Diode Wafer 39 Mils, 40 Volt, 1 Amp, 0.40VF.
|
TRANSYS Electronics Limited
|
| SB040P200-W-AG SB040P200-W-AG_AL SB040P200-W-AG/AL |
Schottky Barrier Diode Wafer 40 Mils, 200 Volt, 1 Amp
|
TRANSYS Electronics Limited
|
| SB065C025-3-W-AG |
Schottky cr Barrier Diode Wafer 65 Mils, 25 Volt, 3 Amp, 0.38VF.
|
TRANSYS Electronics Limited
|
| SB106P150-W-AG |
Schottky Barrier Diode Wafer 106 Mils, 150 Volt, 10 Amp
|
TRANSYS Electronics Limited
|
| SB106P125-W-AG SB106P125-W-AG/AL |
Schottky Barrier Diode Wafer 106 Mils, 125 Volt, 10 Amp
|
TRANSYS Electronics Limited
|
