| PART |
Description |
Maker |
| MB85402 |
16384 Words x 16-Bit
|
Fujitsu
|
| MB85414 |
16384 Words x 32-Bit
|
Fujitsu
|
| HM6167LP-8 HM6167P-6 HM6167P-8 |
16384-word x 1-bit high speed CMOS static RAM, 100ns
16384-word x 1-bit high speed CMOS static RAM, 85ns
|
Hitachi Semiconductor
|
| GM71C18163BT-8 GM71C18163BJ-6 GM71C18163BJ-8 GM71C |
1,048,576 words x 16 bit DRAM, 80ns, low power
1,048,576 words x 16 bit DRAM, 70ns, low power
1,048,576 words x 16 bit DRAM, 60ns, low power
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
LG Semiconductor
|
| UPD2716 |
16384 Bit UV Erasable PROM
|
NEC
|
| SPR016 |
16384 Bit Serial ROM
|
General Semiconductor
|
| CDM53128 |
CMOS 16384 x 8-Bit LSI Static ROM
|
Harris
|
| AM27S45A |
(AM27S45 / AM27S47 (A/SA)) 16384-Bit Bipolar Registered PROM
|
AMD
|
| THM321000S-10 THM321000S-80 THM321000SG-10 THM3210 |
Chip-on-Glass (COG) Technology, 16 Characters x 2 Lines
1,048,576 WORDS x 32 BIT DYNAMIC RAM MODULE
1/048/576 WORDS x 32 BIT DYNAMIC RAM MODULE
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| HM6167LP-6 HM6167H-55 HM6167P-8 HM6167P-6 HM6167LP |
x1 SRAM x1的SRAM
16384 word x 1-Bit High Speed CMOS Static RAM
|
Hitachi Semiconductor
|
