| PART |
Description |
Maker |
| 4N30Z |
40A 300V N-CHANNEL POWER MOSFET
|
UNISONIC TECHNOLOGIES
|
| APT30M85BVR APT30M85 |
POWER MOS V 300V 40A 0.085 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| AOK40N30 |
300V,40A N-Channel MOSFET
|
ShenZhen FreesCale Electronics. Co., Ltd
|
| STF7NK30Z STP7NK30Z STP7NK30Z05 |
N-CHANNEL 300V - 0.80ヘ - 5A TO-220/TO-220FP Zener-Protected SuperMESH⑩MOSFET
N-CHANNEL 300V - 0.80Ω - 5A TO-220/TO-220FP Zener-Protected SuperMESH?MOSFET
N-CHANNEL 300V - 0.80惟 - 5A TO-220/TO-220FP Zener-Protected SuperMESH?⑼OSFET
N-CHANNEL 300V - 0.80楼? - 5A TO-220/TO-220FP Zener-Protected SuperMESH垄芒MOSFET
|
STMicroelectronics
|
| STP40NF12 |
N-CHANNEL 120V - 0.028 OHM - 40A TO-220 LOW GATE CHARGE STRIPFET II POWER MOSFET
N-CHANNEL 120V - 0.028W - 40A TO-220 LOW GATE CHARGE STripFET⑩ II POWER MOSFET
N-CHANNEL 120V - 0.028W - 40A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET
N-CHANNEL POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| SC160C SC265D4 SC265D3 SC265D5 SC129D FB150D8 SC16 |
THYRISTOR MODULE|TRIAC
TRIAC|400V V(DRM)|40A I(T)RMS|IST-3RT-1/2
TRIAC|400V V(DRM)|40A I(T)RMS|IST-3RT-1/4
TRIAC|400V V(DRM)|40A I(T)RMS|TO-208VAR1/4
TRIAC|400V V(DRM)|25A I(T)RMS|TO-220
TRIAC|400V V(DRM)|150A I(T)RMS|TO-200AB
TRIAC|200V V(DRM)|150A I(T)RMS|TO-200AB
TRIAC|200V V(DRM)|25A I(T)RMS|TO-220
TRIAC|300V V(DRM)|25A I(T)RMS|IST-3RT-1/4
TRIAC|300V V(DRM)|25A I(T)RMS|TO-208VAR1/4
TRIAC|200V V(DRM)|40A I(T)RMS|IST-3RT-1/4
TRIAC|200V V(DRM)|25A I(T)RMS|IST-3RT-1/4
TRIAC|300V V(DRM)|40A I(T)RMS|IST-3RT-1/4
TRIAC|300V V(DRM)|25A I(T)RMS|TO-220
TRIAC|600V V(DRM)|25A I(T)RMS|TO-220
TRIAC|400V V(DRM)|100A I(T)RMS|TO-200AB
TRIAC|400V V(DRM)|300A I(T)RMS|TO-200VAR50
FUSE 1A FA SMT 1206
TRIAC|200V V(DRM)|300A I(T)RMS|TO-200VAR50 可控硅| 200伏五（DRM）的| 300口（T）的有效值|00VAR50
TRIAC|800V V(DRM)|150A I(T)RMS|STF-M20 可控硅| 800V的五（DRM）的| 150A口（T）的有效值|培训基金- M20
TRIAC|600V V(DRM)|150A I(T)RMS|TO-200AB 可控硅| 600V的五（DRM）的| 150A口（T）的有效值|00AB
TRIAC|1.2KV V(DRM)|300A I(T)RMS|STF-M23 可控硅| 1.2KV五（DRM）的| 300口（T）的有效值|培训基金，一辆M23
TRIAC|600V V(DRM)|70A I(T)RMS|STF-M12 可控硅| 600V的五（DRM）的|0A口（T）的有效值|培训基金- M12
TRIAC|1.2KV V(DRM)|150A I(T)RMS|STF-M20 可控硅| 1.2KV五（DRM）的| 150A口（T）的有效值|培训基金- M20
TRIAC|200V V(DRM)|50A I(T)RMS|TO-208VARM8 可控硅| 200伏五（DRM）的| 50A条口（T）的有效值|08VARM8
|
Cornell Dubilier Electronics, Inc.
EPCOS AG
SIEMENS AG
|
| IRF5210 |
-100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=-100V Rds(on)=0.06ohm Id=-40A)
Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A)
Power MOSFET(Vdss=-100V/ Rds(on)=0.06ohm/ Id=-40A)
|
IRF[International Rectifier]
|
| STD40NF06 STD40NF06T4 |
N-CHANNEL 60V - 0.024 OHM - 40A DPAK STRIPFET II POWER MOSFET
N-CHANNEL 60V - 0.024 ohm - 40A DPAK STripFET II POWER MOSFET
N-CHANNEL 60V - 0.024 ohm - 40A DPAK STripFET⑩ II POWER MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| STP40NF10L |
N-CHANNEL 100V 0.028 OHM 40A TO-220 LOW GATE CHARGE STRIPFET POWER MOSFET
N-CHANNEL 100V - 0.028ohm - 40A TO-220 LOW GATE CHARGE STripFET POWER MOSFET
|
ST Microelectronics
STMicroelectronics
|
| IRF150 |
40A, 100V, 0.055 Ohm, N-Channel Power MOSFET 40 A, 100 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
40A/ 100V/ 0.055 Ohm/ N-Channel Power MOSFET
|
Intersil, Corp.
Intersil Corporation
|
| FQI7N30 FQB7N30 FQB7N30TM |
300V N0Channel MOSFET
300V N-Channel MOSFET
300V N-Channel QFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| UF3N30L-TM3-R |
3A, 300V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
