| PART |
Description |
Maker |
| FG600AL28 POWEREXINC-FG1000AH44 GT300AV70 GT300AL2 |
1400 V, GATE TURN-OFF SCR 3500 V, GATE TURN-OFF SCR 1200 V, GATE TURN-OFF SCR 3600 V, GATE TURN-OFF SCR 2300 V, GATE TURN-OFF SCR 2500 V, GATE TURN-OFF SCR
|
POWEREX INC
|
| T7SH024.58GDN T72H024.58GDN T707063.258GDN T607021 |
706.5 A, SCR T7S, 3 PIN 706.5 A, SCR T72, 3 PIN 510.25 A, SCR T70, 3 PIN 196.25 A, SCR T60, 3 PIN 431.75 A, SCR T70, 3 PIN 392.5 A, SCR 109.9 A, 300 V, SCR 471 A, SCR 1177.5 A, SCR 785 A, SCR 942 A, SCR 2669 A, SCR 565.2 A, SCR 549.5 A, SCR 2512 A, SCR 1570 A, 700 V, SCR 235.5 A, SCR 62.8 A, SCR 1256 A, SCR 628 A, SCR 4710 A, SCR 1020.5 A, SCR 109.9 A, 150 V, SCR 1570 A, SCR 2826 A, SCR 3140 A, SCR 1727 A, SCR
|
Powerex, Inc. POWEREX INC
|
| 350PEQ50W 350PEQ90W 350PEQ60W 350PEQ110W 350PEQ100 |
V(rrm/drm): 500V; 520A RMS Di-vergence gate, hockey puk, inverter SCR V(rrm/drm): 900V; 520A RMS Di-vergence gate, hockey puk, inverter SCR V(rrm/drm): 600V; 520A RMS Di-vergence gate, hockey puk, inverter SCR V(rrm/drm): 1100V; 520A RMS Di-vergence gate, hockey puk, inverter SCR V(rrm/drm): 1000V; 520A RMS Di-vergence gate, hockey puk, inverter SCR V(rrm/drm): 1200V; 520A RMS Di-vergence gate, hockey puk, inverter SCR V(rrm/drm): 700V; 520A RMS Di-vergence gate, hockey puk, inverter SCR V(rrm/drm): 800V; 520A RMS Di-vergence gate, hockey puk, inverter SCR
|
International Rectifier
|
| 2N5064RLRA 2N5064RLRM 2N5064RLRMG 2N5061RLRM 2N506 |
Thyristor .8A 100V Connector Housing; Series:MicroClasp; No. of Contacts:3; Gender:Female; Body Material:Nylon 6/6; No. of Rows:1; Pitch Spacing:0.079" RoHS Compliant: Yes 0.8 A, 100 V, SCR, TO-92 Sensitive Gate Silicon Controlled Rectifiers 0.8 A, 100 V, SCR, TO-92 Sensitive Gate Silicon Controlled Rectifiers 0.8 A, 60 V, SCR, TO-92 Silicon Controlled Rectifier .8A 25V Thyristor .8A 200V Thyristor .8A 50V
|
ONSEMI[ON Semiconductor]
|
| BD814 BD844 |
SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):65A; Peak Non Repetitive Surge SCR Thyristor; SCR Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):8A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:200uA 晶体管|晶体管|进步党| 80V的五(巴西)总裁| 1.5AI(丙)|02AA
|
Teridian Semiconductor, Corp.
|
| BD828-10 BD826-6 BD826-16 BD830-10 |
SCR Thyristor; SCR Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):10A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:200uA TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 1.5A I(C) | TO-202 TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1.5A I(C) | TO-202 SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):25A; Peak Non Repetitive Surge Current, Itsm:350A; Gate Trigger Current Max, Igt:35uA 晶体管|晶体管|进步党| 60V的五(巴西)总裁| 1.5AI(丙)|02
|
Analog Devices, Inc.
|
| TT430N18KOC-A TT430N20KOF-K TT430N20KOC-A TT430N22 |
800 A, 1800 V, SCR MODULE-7 800 A, 2000 V, SCR MODULE-7 800 A, 2200 V, SCR MODULE-7 150 A, 800 V, SCR 900 A, 800 V, SCR 900 A, 600 V, SCR 800 A, 800 V, SCR 120 A, 1600 V, SCR
|
Infineon Technologies AG
|
| IST110A-6 ISTF160-5F35 ISTF160-3F35 IST85-13 IST85 |
175 A, 600 V, SCR 355 A, 500 V, SCR 355 A, 300 V, SCR 175 A, 1300 V, SCR 175 A, 300 V, SCR 355 A, 200 V, SCR 355 A, 1000 V, SCR
|
|
| MP03XXX190-12 MP03XXX190 MP03XXX190-08 MP03XXX190- |
Phase Control Dual SCR, SCR/Diode Modules 相位控制双可控硅,SCR /二极管模
|
Dynex Semiconductor, Ltd. DYNEX[Dynex Semiconductor]
|
| X0402BE |
Sensitive Gate SCR
|
Tag Semiconductors
|
| S0402BH S0402DH S0402MH S0402NH S0402XH |
Sensitive Gate SCR
|
ST Microelectronics
|
|