| PART |
Description |
Maker |
| MIC45212-1 |
26V, 14A DC-to-DC Power Module
|
Microchip Technology
|
| MIC45208-1 |
26V 10A DC-to-DC Power Module
|
Micrel Semiconductor
|
| IRF644N IRF644NL IRF644NS IRF644 IRF644NSTRR |
250V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=250V, Rds(on)=240mohm, Id=14A)
Power MOSFET(Vdss=250V/ Rds(on)=240mohm/ Id=14A)
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 14A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 250V五（巴西）直|4A条（丁）|63AB
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRGS14B40L |
14A, Voltage Clamped 400V IGBT(14A,电压箝位400V双极型晶体管)
|
International Rectifier
|
| IRF530 IRF530PBF |
14 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Power MOSFET(Vdss=100V/ Rds(on)=0.16ohm/ Id=14A)
Power MOSFET(Vdss=100V, Rds(on)=0.16ohm, Id=14A)
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
|
IRF[International Rectifier]
|
| MAPLST1900-060CF |
LDMOS RF Line Power FET Transistor 60 W , 1890-1925 MHz, 26V
|
M/A-COM Technology Solutions, Inc.
|
| IRFR12N25DPBF IRFU12N25DPBF IRFR13N20DTRPBF |
High frequency DC-DC converters
HEXFET Power MOSFET ( VDSS = 250V , RDS(on)max = 0.26ヘ , ID = 14A )
HEXFET Power MOSFET ( VDSS = 250V , RDS(on)max = 0.26Ω , ID = 14A )
|
International Rectifier
|
| MAPLST0810-090CF MAPLST0810-090CF-05-2004 |
RF Power Field Effect Transistor LDMOS, 865 - 960 MHz, 90W, 26V
|
MACOM[Tyco Electronics]
|
| MAPLST1820-090CF |
RF Power Field Effect Transistor LDMOS, 1800 - 2000 MHz, 90W, 26V
|
Tyco Electronics
|
| 14N50 14N50L-TQ2-T 14N50G-TQ2-R 14N50G-TQ2-T 14N50 |
14A, 500V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| HUF75823D3S HUF75823D3 FN4847 |
14A, 150V, 0.150 Ohm, N-Channel, UltraFET Power MOSFET 14 A, 150 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
14A 150V 0.150 Ohm N-Channel UltraFET Power MOSFET
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| IRFP450LC |
Power MOSFET(Vdss=500V, Rds(on)=0.40ohm, Id=14A)
|
IRF[International Rectifier]
|
