| PART |
Description |
Maker |
| BUZ104S Q67040-S4007-A2 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175∑C operating temperature) 14 A, 55 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
SIPMOS ? Power Transistor
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175C operating temperature)
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175°C operating temperature)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| SFF75N10B SFF75N10B1 SFF27N50M SFF27N50Z |
Avalanche Rated N-channel MOSFET
|
Solid States Devices, Inc
Solid States Devices, I...
|
| SFF116N10M SFF116N10Z |
Avalanche Rated N-channel MOSFET
|
Solid States Devices, Inc
|
| SFF44N50Z SFF44N50M |
Avalanche Rated N-channel MOSFET
|
Solid States Devices, Inc
|
| IRFF210 |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS THRU-HOLE (TO-205AF)
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET剖TRANSISTORS THRU-HOLE (TO-205AF)
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?TRANSISTORS THRU-HOLE (TO-205AF)
|
International Rectifier
Intersil Corporation
|
| IRHM8450 IRHM7450 |
RADIATION HARDENED POWER MOSFET
REPETITIVE AVALANCHE AND dv/dt RATED
|
IRF[International Rectifier]
|
| SPD07N20 SPD07N20G SPD07N2008 SPU07N20G SPD07N20GX |
SIPMOS? Power Transistor Features N channel Enhancement mode Avalanche rated
SIPMOSò Power Transistor Features N channel Enhancement mode Avalanche rated
7 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
|
Infineon Technologies AG
|
| IXTQ250N075T IXTH250N075T |
TrenchMV Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
|
IXYS Corporation
|
| IXTP4N80P IXTA4N80P |
PolarHV Power MOSFET N-Channel Enhancement Mode Avalanche Rated
|
IXYS Corporation
|
| BSS806N |
OptiMOS2 Small-Signal-Transistor Ultra Logic level (1.8V rated) Avalanche rated
|
TY Semiconductor Co., Ltd
|
| IRF640 |
Power MOSFET Dynamic dV/dt Rating Repetitive Avalanche Rated Fast Switching
|
Kersemi Electronic Co., Ltd.
|
