| PART |
Description |
Maker |
| 2SC2462 |
Low frequency amplifier. Collector-base voltage VCBO 50 V
|
TY Semiconductor Co., Ltd
|
| 2SA1566 |
Low frequency amplifier. Collector to base voltage VCBO -120 V
|
TY Semiconductor Co., Ltd
|
| 2SB1132 |
Low VCE(sat) Compliments to 2SD1664 Collector-Base Voltage VCBO -40 V
|
TY Semiconductor Co., Ltd
|
| Q62702-F1287 Q62702-F1240 BF840 BF841 |
NPN Silicon RF Transistors (Suitable for common emitter RF/ IF amplifiers Low collector-base capacitance due to contact shield diffusion)
NPN Silicon RF Transistors (Suitable for common emitter RF IF amplifiers Low collector-base capacitance due to contact shield diffusion)
From old datasheet system
NPN Silicon RF Transistors (Suitable for common emitter RF, IF amplifiers Low collector-base capacitance due to contact shield diffusion)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| 2SC3545 |
High Gain Bandwidth Procuct; fT = 2 000 MHz TYP. Low Collector to Base Time
|
TY Semiconductor Co., Ltd
|
| 2SC3120 |
Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 15 V
|
TY Semiconductor Co., Ltd
|
| 2SD2318 |
High DC current gain. Low saturation voltage.Collector-base voltage VCBO 80 V
|
TY Semiconductor Co., Ltd
|
| PBSS301PD |
4A PNP low VCEsat (BISS) transistor PNP low VCEsat Breakthrough
|
NXP
|
| 2SB1537 |
Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC.
|
TY Semiconductor Co., Ltd
|
| 2N2356 |
COLLECTOR TO BASE VOLTAGE
|
New Jersey Semi-Conductor Products, Inc.
|
