| PART |
Description |
Maker |
| 2SC5397 |
TRANSISTOR FOR LOW FREQUENCY AMPLIFY, MEDIAM FREQUENCY AMPLIFY SILICON NPN EPITAXIAL TYPE MICRO
|
Isahaya Electronics Cor...
|
| 2SC5384 |
125mW SMD NPN transistor, maximum rating: 25V Vceo, 30mA Ic, 35 to 180 hFE.
Transistor For High Frequency Amplify, Medium Frequency Amplify Application Silicon NPN Epitaxial Type Ultra Super Mini
|
Isahaya Electronics Corporation
|
| 2SC3355 2SC3355-T |
For amplify low noise and high frequency
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
|
NEC[NEC]
|
| 2SC5383-10 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corpora...
|
| 2SC5214 |
For Low Frequency Amplify Application Silicon Npn Epitaxial Type
|
Isahaya Electronics Corporation
|
| INC6008AP1 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| 2SD1447 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
Panasonic Semiconductor
|
| 2SA2193 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| ISA1989AU1 ISA1989AU110 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| 2SA1993 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE MICRO
|
ISAHAYA[Isahaya Electronics Corporation]
ETC[ETC]
|
