| PART |
Description |
Maker |
| 2N3109 2N3109E4 |
1000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD
Bipolar NPN Device
|
SEMELAB LTD
SEME-LAB
|
| AT-38086 |
4.8 V NPN Silicon Bipolar Common Emitter Transistor(4.8 V NPN 硅双极型普通射极晶体管)
|
Agilent(Hewlett-Packard)
|
| SFBUV60 BUV60.MOD |
50 A, 125 V, NPN, Si, POWER TRANSISTOR, TO-204AE
Bipolar NPN Device
|
SEMELAB LTD
Seme LAB
|
| BUV61 BUV61.MOD |
50 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-204AE
Bipolar NPN Device in a Hermetically sealed TO3
|
SEMELAB LTD
Seme LAB
|
| BUX14 BUX14-JQR |
10 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-204AA
Bipolar NPN Device in a Hermetically sealed TO3
|
SEMELAB LTD
Seme LAB
|
| 2N5337X |
Bipolar NPN Device in a Hermetically sealed TO39
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-39
|
Seme LAB
|
| BU205 BU205.MODR1 |
2.5 A, 700 V, NPN, Si, POWER TRANSISTOR, TO-204AA
Bipolar NPN Device in a Hermetically sealed TO3
|
SEMELAB LTD
Seme LAB
|
| BC440-6 |
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 2A I(C) | TO-39
Bipolar NPN Device in a Hermetically sealed TO39
|
Seme LAB
|
| 2N5785SMD05 |
TRANSISTOR | BJT | NPN | 65V V(BR)CEO | 3.5A I(C) | SMT
Bipolar NPN Device in a Hermetically sealed
|
Seme LAB
|
| JAN2N2222A JANTX2N2222A JANTXV2N2222A |
NPN Transistor
SMALL SIGNAL BIPOLAR NPN SILICON
|
MICROSEMI[Microsemi Corporation]
|
| 2N3110 2N3110.MODE4 |
1000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD
Bipolar NPN Device in a Hermetically sealed TO39
|
SEMELAB LTD
Seme LAB
|
|
