| PART |
Description |
Maker |
| TISP6NTP2B |
QUAD FORWARD-CONDUCTING BUFFERED P-GATE THYRISTORS
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| TISP61521 |
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
|
Bourns Inc.
|
| TISP61089 |
DUAL FORWARD-CONDUCTING-P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
|
Power Innovations Ltd
Power Innovations Limited
Power Innovations International, Inc.
|
| TISP61089S TISP61089SD TISP61089SDR |
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
|
Power Innovations Ltd
Power Innovations Limited
|
| TISP61512P TISP61511D |
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
|
POINN[Power Innovations Ltd]
Power Innovations Limited
|
| TISP61089AD TISP61089ASD TISP61089D TISP61089SD |
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
|
Bourns Electronic Solutions
|
| TISP61089AS |
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS 双远期导电的P -可编程门晶闸管过压保
|
Power Innovations International, Inc.
Power Innovations Limited
Power Innovations Ltd
|
| TISPPBL3D TISPPBL3DR-S TISPPBL3DR TISPPBL3 TISPPBL |
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS FOR ERICSSON MICROELECTRONICS SUBSCRIBER LINE INTERFACE CIRCUITS (SLIC)
|
BOURNS[Bourns Electronic Solutions]
|
| RCR150BX12 RCR150BX16 RCR150BX20 RCR150BX24 FR500A |
THYRISTOR|REVERSE-CONDUCTING|600V V(DRM)|STF-M20
THYRISTOR|REVERSE-CONDUCTING|800V V(DRM)|STF-M20
THYRISTOR|REVERSE-CONDUCTING|1KV V(DRM)|STF-M20
THYRISTOR|REVERSE-CONDUCTING|1.2KV V(DRM)|STF-M20
THYRISTOR|REVERSE-CONDUCTING|600V V(DRM)|TO-200VAR84 晶闸管|反向导电| 600V的五（DRM）的|00VAR84
THYRISTOR|REVERSE-CONDUCTING|600V V(DRM)|TO-200VAR50
THYRISTOR|REVERSE-CONDUCTING|600V V(DRM)|TO-200AB
THYRISTOR|REVERSE-CONDUCTING|800V V(DRM)|TO-200VAR50
|
Rochester Electronics, LLC
|
| FS1UM-16A |
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| IHW20N120R3 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
