| PART |
Description |
Maker |
| MRF9180 MRF9180S |
MRF9180, MRF9180S 880 MHz, 170 W, 26 V Lateral N-Channel RF Power MOSFETs
880 MHz 170 W 26 V LATERAL N-CHANNEL RF POWER MOSFETs
880 MHz, 170 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs
|
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| BSS110E6288 BSS110E6296 BSS110E6325 |
170 mA, 50 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
|
SIEMENS A G
INFINEON TECHNOLOGIES AG
|
| NX1029X |
60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET
|
NXP Semiconductors
|
| SGM0410 |
3.5A , 100V , RDS(ON) 170 m N-Channel Enhancement Mode Power MOSFET
|
SeCoS Halbleitertechnologie GmbH
|
| STL23NM50N |
N-channel 500 V, 0.170 typ., 14 A MDmesh II Power MOSFET in a PowerFLAT 8x8 HV package
|
STMicroelectronics
|
| V23809-C8-T10 |
Multimode 1300 nm LED Fast Ethernet/FDDI/ATM 170 MBd 1x9 Transceiver with ST Connector 多模1300纳米的LED与ST快速以太网/光纤分布式数据介 ATM70 MBdx9收发器？连接
MM 170 MBd FE/FDDI/ATM Transceiver
|
Infineon Technologies AG
|
| AGR21060E AGR21060EF AGR21060EU |
60 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET
|
TriQuint Semiconductor
|
| AGR21045EF |
45 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET
|
TriQuint Semiconductor
|
| EFG14G EFG15E |
3 PHASE, 170 A, 1400 V, SILICON, RECTIFIER DIODE
3 PHASE, 170 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
|
CRYDOM CORP
|
| BSS119 Q67000-S007 Q67000-S063 |
SIPMOS Small-Signal Transistor (N channel Enhancement mode) 170 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
16 Characters x 1 Lines, 5x7 Dot Matrix Character and Cursor
SIPMOS ? Small-Signal Transistor
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| VCO3049 |
170.2MHz VCO
|
CTS Corporation
|
| MCP6271T-E_CH MCP6271T-E_MS MCP6271T-E_OT MCP6271T |
170 渭A, 2 MHz Rail-to-Rail Op Amp
170 楼矛A, 2 MHz Rail-to-Rail Op Amp
170 μA, 2 MHz Rail-to-Rail Op Amp
|
Microchip Technology
|
