| PART |
Description |
Maker |
| MUX08FQ |
8-Chan/Dual 4-Chan JFET Analog Multiplexers (Overvoltage & Power Supply Loss Protected) SGL ENDED MULTIPLEXER, CDIP16
|
Analog Devices, Inc.
|
| OM6559SP1 OM6558SP1 OM6545SP1 |
TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 25A I(C) | SIP 晶体管| IGBT的|正陈| 1KV交五（巴西）国际消费电子展|5A条（c）的|园区
TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 21A I(C) | SIP 晶体管| IGBT的|正陈| 1KV交五（巴西）国际消费电子展| 21A条（c）的|园区
TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 49A I(C) | SIP 晶体管| IGBT的|正陈| 500V五（巴西）国际消费电子展|9A一（c）|园区
|
Electronic Theatre Controls, Inc.
OKI SEMICONDUCTOR CO., LTD.
|
| SB30-45-25 SB30-40-258RM SB30-40-258M SB30-40-258A |
Dual Schottky Barrier Diode In TO258 Metal Package For HI-REL Application(Common Anode)(双肖特基势垒二极HI-REL应用,TO258金属封装,共阳极连) 双肖特基二极管在TO258金属封装，高可靠性的应用（共阳极）（双肖特基势垒二极管（高可靠性应用，TO258金属封装，共阳极连接））
DUAL SCHOTTKY BARRIER DIODE IN TO258 METAL PACKAGE FOR HI-REL APPLICATIONS 30 A, 40 V, SILICON, RECTIFIER DIODE, TO-258AA
Dual Schottky Barrier Diode In TO258 Metal Package For HI-REL Application(Series Connection)(双肖特基势垒二极HI-REL应用,TO258金属封装,串行连接))
Dual Schottky Barrier Diode In TO258 Metal Package For HI-REL Application(Common Cathode)(双肖特基势垒二极HI-REL应用,TO258金属封装,共阴极连)
|
SEMELAB LTD
TT electronics Semelab, Ltd.
TT electronics Semelab Limited
Semelab(Magnatec)
SEME-LAB[Seme LAB]
|
| 878-2-3 SD878-2-3 |
CAP & CHAN, SMA
|
Winchester Electronics Corporation
|
| U20DL2C48A 20DL2C48A U20FL2C48A 20FL2C48A E000406 |
Switching Power Supply Application High Efficiency Diode(用于开关型电源的高效二极管)
DIODE(CWITCHINGTYPEPOWERSUPPLYAPPLICATION)
SWITCHING TYPE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION
DIODE (CWITCHING TYPE POWER SUPPLY APPLICATION)
From old datasheet system
|
Toshiba Corporation
ToshibaSemiconductor
TOSHIBA[Toshiba Semiconductor]
|
| 20PT1021SI |
10/100 BASE DUAL PORT TRANSFOMER FOR MDIX APPLICATION
|
Bothhand USA, LP.
|
| NP30N04QUK-15 |
40 V ?30 A ?Dual N-channel Power MOS FET Application: Automotive
|
Renesas Electronics Corporation
|
| ATR0839 ATR0839-PFQW |
4-Channel LVDS Laser Driver for Dual-layer Application
|
ATMEL Corporation
|
| MGA-16316-BLKG MGA-16316-TR1G MGA-16316-15 |
Dual LNA for Balanced Application 1950 ?4000 MHz
|
AVAGO TECHNOLOGIES LIMITED
AVAGO TECHNOLOGIES LIMI...
|
| DF100R12KF-A FD150R12KF-K |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 100A I(C) | M:HL093HW048 晶体管| IGBT的|正陈| 1.2KV五（巴西）国际消费电子展| 100A一（c）|米：HL093HW048
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 150A I(C) | M:HL093HW048 晶体管| IGBT的|正陈| 1.2KV五（巴西）国际消费电子展| 150A一（c）|米：HL093HW048
|
Atmel, Corp.
Air Cost Control
|
| MBR20200CT |
SWITCHING TYPE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION
|
KEC(Korea Electronics)
|
