| PART |
Description |
Maker |
| 1N914BT-10 1N914BT-87Y 1N914BT-12A 1N914BT-85 1N91 |
0.15 A, 100 V, SILICON, SIGNAL DIODE, DO-35
0.13 A, 90 V, SILICON, SIGNAL DIODE, DO-35
0.11 A, 40 V, SILICON, SIGNAL DIODE, DO-35
0.2 A, 250 V, SILICON, SIGNAL DIODE, DO-35
0.15 A, 75 V, SILICON, SIGNAL DIODE, DO-35
0.2 A, 40 V, SILICON, SIGNAL DIODE, DO-34
0.05 A, 40 V, SILICON, SIGNAL DIODE, DO-35
0.11 A, 40 V, SILICON, SIGNAL DIODE, DO-34
0.2 A, 200 V, SILICON, SIGNAL DIODE, DO-35
0.13 A, 90 V, SILICON, SIGNAL DIODE, DO-34
0.05 A, 40 V, SILICON, SIGNAL DIODE, DO-34
|
|
| EGP10GT50A EGP10JT50A EGP10KT50R EGP10D EGP10B |
Fast Rectifiers (Glass Passivated)
1 A, 800 V, SILICON, SIGNAL DIODE, DO-41
1 A, 600 V, SILICON, SIGNAL DIODE, DO-41
1 A, 400 V, SILICON, SIGNAL DIODE, DO-41
|
FAIRCHILD SEMICONDUCTOR CORP
|
| UMA5817 UMA5818 UMA5819 MA5817 MVUMA5819 MQUMA5817 |
1 A, 40 V, SILICON, SIGNAL DIODE
ULTRAMITTE SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS 1 A, 30 V, SILICON, SIGNAL DIODE
1 A, 20 V, SILICON, SIGNAL DIODE
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
MICROSEMI CORP-SCOTTSDALE
|
| 2950077 |
Diode block - EMG 22-DIO 7M
|
PHOENIX CONTACT
|
| CHA2391 CHA2391-99F_00 CHA2391-99F/00 |
36-40GHz Very Low Noise Amplifier
DIO, SWITCH MODE POWER RECTIFIER, MBRD835L, SMT, DPAK36
|
United Monolithic Semicondu...
United Monolithic Semiconductors
|
| 1N3647 1N5182 1N4257 1N3643 1N4254 JANTXV1N3647 1N |
HIGH VOLTAGE RECTIFIERS 0.25 A, SILICON, SIGNAL DIODE
CAP 1.0PF 50V /-0.25PF NP0(C0G) SMD-0805 TR-7-PL SN-NIBAR 0.25 A, SILICON, SIGNAL DIODE
|
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
|
| JAN1N3612 JANTX1N3957 |
DIODE 1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL, PLASTIC, EG1, 2 PIN, Signal Diode
DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-204AL, Signal Diode
|
Vishay Semiconductors
|
| PRS07 PRS07J PRS07D PRS07G PRS07G115 PRS07J115 PRS |
0.6 A, 200 V, SILICON, SIGNAL DIODE
0.6 A, 600 V, SILICON, SIGNAL DIODE HERMETIC SEALED, GLASS PACKAGE-2
0.6 A, 400 V, SILICON, SIGNAL DIODE HERMETIC SEALED, GLASS PACKAGE-2
Fast soft-recovery rectifiers
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| NTE2945 |
SM DIO/SMBJ12A SMB UNI-DIR MOSFET的N沟道，增强模式高速开
MOSFET N-Channel, Enhancement Mode High Speed Switch
|
NTE Electronics, Inc.
|
| 1N3207 1N3064M 1N3069M 1N3206 1N897 MC001 MC002 MC |
PELLET DIODES 0.1 A, SILICON, SIGNAL DIODE
PELLET DIODES 0.005 A, SILICON, SIGNAL DIODE
PELLET DIODES 0.05 A, SILICON, SIGNAL DIODE
PELLET DIODES 0.01 A, SILICON, SIGNAL DIODE
(1N897 - 1N899) PELLET DIODES
Signal or Computer Diode
|
Microsemi, Corp.
Microsemi Corporation
|
| EGF1A EGF1D EGF1C EGF1B |
1.0 Ampere High Efficiency Glass Passivated Rectifier(平均整流电流1.0安培高效率玻璃钝化整流器) 1 A, 150 V, SILICON, SIGNAL DIODE, DO-214AC
SR BTS FT 8 ASY 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
|
