| PART |
Description |
Maker |
| BIR-BO18V4V-2 BIR-BO18E4G-2 BIR-BN08E4G-2 |
4.98 mm, 1 ELEMENT, INFRARED LED, 850 nm
5 mm, 1 ELEMENT, INFRARED LED, 850 nm
5 mm, 1 ELEMENT, INFRARED LED, 880 nm
|
American Bright Optoelectronics, Corp.
AMERICAN BRIGHT OPTOELECTRONICS CORP
|
| APA3010F3C |
3.0x1.0 mm RIGHT ANGLE INFRARED EMITING DIODE 2 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Kingbright, Corp.
Kingbright Corporation
|
| 1N6266 |
GAAS INFRARED EMITTING DIODE 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
| OP290 OP290A OP290B OP290C OP291A OP291B OP291C OP |
4.95 mm, 1 ELEMENT, INFRARED LED, 890 nm
Plastic Infrared Emitting Diode
|
OPTEK TECHNOLOGY INC
OPTEK Technologies
|
| OP165D |
GaAs Plastic Infrared Emitting Diode(砷化镓塑料红外发光二极管,可替代K6500\OP163系列器件) 3 mm, 1 ELEMENT, INFRARED LED, 935 nm
|
Optek Technology
|
| MLED930 |
Infrared LED 3.68 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Motorola, Inc
Motorola Mobility Holdings, Inc.
|
| R878 R87810 L9337 |
High power LED for optical switches
4.2 mm, 1 ELEMENT, INFRARED LED, 870 nm
|
Hamamatsu Corporation
|
| GL480Q |
1.6 mm, 1 ELEMENT, INFRARED LED, 950 nm
|
SHARP ELECTRONICS CORP
|
| 5202CS21 5202CS12 |
5 mm, 1 ELEMENT, INFRARED LED, 950 nm
|
VISHAY TELEFUNKEN
TEMIC SEMICONDUCTORS
|
| TSHA4400AS12 TSHA4400AS12Z |
3 mm, 1 ELEMENT, INFRARED LED, 875 nm
|
VISHAY TELEFUNKEN
TEMIC SEMICONDUCTORS
|
| XZTHI54W |
1.3 mm, 1 ELEMENT, INFRARED LED, 880 nm
|
SUNLED COMPANY LTD
|
|
