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ST2318SRG - ST2318SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.

ST2318SRG_7629312.PDF Datasheet


Part No.	ST2318SRG
Description	ST2318SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
File Size	209.29K / 7 Page
Maker	Stanson Technology
Homepage	http://www.stansontech.com/
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