| PART |
Description |
Maker |
| TP2010L-1TA TP2010L-1TR1 TP2410L-1TA TP2410L-1TR1 |
180 mA, 200 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AA
180 mA, 240 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AA
|
Vishay Intertechnology, Inc.
|
| 0601751042 |
ANGLE GRINDER GWS20-180 230V 角向磨光机GWS20 - 180 230
|
TE Connectivity, Ltd.
|
| NX3020NAKW NX3020NAKW-15 |
30 V, 180 mA N-channel Trench MOSFET
|
NXP Semiconductors
|
| NP179N055TUK NP179N055TUK-E1-AY NP179N055TUK-E2-AY |
55 V ?180 A ?N-channel Power MOS FET
|
Renesas Electronics Corporation
|
| NDF0610D10Z NDF0610D29Z |
180 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
|
FAIRCHILD SEMICONDUCTOR CORP
|
| NX3020NAKS NX3020NAKS-15 |
30 V, 180 mA dual N-channel Trench MOSFET
|
NXP Semiconductors
|
| TP0205A-T1-E3 |
180 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
VISHAY SILICONIX
|
| STH240N10F7-2 STH240N10F7-6 |
Ultra low on-resistance
N-channel 100 V, 0.002 Ohm typ., 180 A STripFET F7 Power MOSFET in a H2PAK-6 package
N-channel 100 V, 0.002 Ohm typ., 180 A STripFET F7 Power MOSFET in a H2PAK-2 package
|
STMicroelectronics
ST Microelectronics
|
| STH400N4F6-2 |
Automotive-grade N-channel 40 V, 0.85 mOhm typ., 180 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in H2PAK-2 package
|
ST Microelectronics
|
| STH310N10F7-6 |
N-channel 100 V, 1.9 mOhm typ., 180 A STripFET(TM) VII DeepGATE(TM) Power MOSFET in H2PAK-6 package
|
ST Microelectronics
|
| SPEAR-07-NC03 |
1 CHANNEL(S), 100M bps, LOCAL AREA NETWORK CONTROLLER, PBGA180 LEAD FREE, 12 X 12 MM, 1.70 MM HEIGHT, LFBGA-180
|
ST Microelectronics
|
| AUIRF2907ZS7PTL AUIRF2907ZS-7P AUIRF2907ZS7PTR |
180 A, 75 V, 0.0038 ohm, N-CHANNEL, Si, POWER, MOSFET ROHS COMPLIANT, PLASTIC, D2PAK-7
Advanced Process Technology Ultra Low On-Resistance
|
Vishay Intertechnology, Inc.
International Rectifier
|
|
