| PART |
Description |
Maker |
| STL34NF06 |
N-CHANNEL 60V 0.024 OHM 34A POWERFLAT LOW GATE CHARGE STRIPFET II MOSFET
N-CHANNEL 60V - 0.024ohm - 34A PowerFLAT⑩ LOW GATE CHARGE STripFET⑩II MOSFET
N-CHANNEL 60V - 0.024ohm - 34A PowerFLAT LOW GATE CHARGE STripFETII MOSFET
N-CHANNEL 60V - 0.024ohm - 34A PowerFLAT LOW GATE CHARGE STripFET?II MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| STB90NF03L STB90NF03LT4 |
N-CHANNEL 30V 0.0056 OHM 90A D2PAK LOW GATE CHARGE STRIPFET POWER MOSFET
N-CHANNEL 30V 0.0056 OHM 90A D2PAK LOW GATE CHARGE STRIPFET POWER MOSFET
N-CHANNEL 30V - 0.0056ohm - 90A D2PAK LOW GATE CHARGE STripFET⑩ POWER MOSFET
N-CHANNEL 30V - 0.0056ohm - 90A D2PAK LOW GATE CHARGE STripFET POWER MOSFET
Niobium Oxide Capacitor; Capacitor Type:Low ESR; Voltage Rating:6.3VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:68uF; Capacitance
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| STL35NF10 |
N-CHANNEL 100V 0.025 OHM 35A POWERFLAT LOW GATE CHARGE STRIPFET II MOSFET
N-CHANNEL 100V - 0.025ohm - 35A PowerFLAT LOW GATE CHARGE STripFET MOSFET
N-CHANNEL 100V - 0.025ohm - 35A PowerFLAT⑩ LOW GATE CHARGE STripFET⑩ MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| STB40NF10L 7743 |
N-CHANNEL 100V - 0.028ohm - 40A D2PAK LOW GATE CHARGE STripFET POWER MOSFET
N-CHANNEL 100V 0.028 OHM 40A D2PAK LOW GATE CHARGE STRIPFET POWER MOSFET
From old datasheet system
N-CHANNEL 100V - 0.028ohm - 40A D2PAK LOW GATE CHARGE STripFET⑩ POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| 74AUP1G38GM132 74AUP1G38GW125 |
Low-power 2-input NAND gate (open drain); Package: SOT886 (XSON6); Container: Tape reel smd AUP/ULP/V SERIES, 2-INPUT NAND GATE, PDSO6
Low-power 2-input NAND gate (open drain); Package: SOT353-1 (TSSOP5); Container: Reel Pack, Reverse, Reverse AUP/ULP/V SERIES, 2-INPUT NAND GATE, PDSO5
|
NXP Semiconductors N.V.
|
| AP9T19GJ |
Low Gate Charge, Capable of 2.5V gate drive
|
Advanced Power Electronics Corp.
|
| IXFH52N30Q IXFK52N30Q IXFT52N30Q |
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t Low Gate Charge and Capacitances
From old datasheet system
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t Low Gate Charge and Capacitances 52 A, 300 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| STP40NF1007 STP40NF10 |
N-channel 100V - 0.025 - 50A TO-220 Low gate charge STripFET II Power MOSFET
N-channel 100V - 0.025з - 50A TO-220 Low gate charge STripFET⑩ II Power MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| STL6NM60N |
N-channel 600 V - 0.85 Ω - 5.75 A - PowerFLAT (5x5) ultra low gate charge MDmesh II Power MOSFET
N-channel 600 V - 0.85 ヘ - 5.75 A - PowerFLAT⑩ (5x5) ultra low gate charge MDmesh⑩ II Power MOSFET
|
STMicroelectronics
|
| HCS04MS FN3046 HCS04D HCS04DMSR HCS04HMSR HCS04K H |
From old datasheet system
Radiation Hardened Hex Inverter
JFET; Transistor Polarity:N Channel; Breakdown Voltage, V(br)gss:-50V; Zero Gate Voltage Drain Current Min, Idss:0.5mA; Zero Gate Voltage Drain Current Max, Idss:12mA; Gate-Source Cutoff Voltage Max, Vgs(off):-1.5V
|
INTERSIL[Intersil Corporation]
|
