| PART |
Description |
Maker |
| FCX658A |
400 Volt VCEO, Optimised hfe characterised upto 200mA
|
TY Semiconductor Co., Ltd
|
| Q7010LH5 Q7010RH5 Q7012LH5 Q7012RH5 Q7015L6 Q7015R |
Alternistor triac, 25A, 800 Volt
Alternistor triac, 15A, 400 Volt
Alternistor triac, 25A, 500 Volt
Alternistor triac, 25A, 200 Volt
Alternistor triac, 8A, 500 Volt
Alternistor triac, 25A, 400 Volt
Gender:Socket; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-35
Alternistor Triacs 交变双向
Alternistor triac, 6A, 500 Volt
Alternistor triac, 15A, 200 Volt
Alternistor triac, 15A, 500 Volt
Alternistor triac, 15A, 600 Volt
Alternistor Triacs
|
TECCOR[Teccor Electronics]
Littelfuse, Inc.
Motorola Mobility Holdings, Inc.
|
| FMMT551 |
60 Volt VCEO, 1 Amp continuous current.
|
TY Semiconductor Co., Ltd
|
| FZT651 |
60 Volt VCEO, 3 Amp continuous current.
|
TY Semiconductor Co., Ltd
|
| FMMT455 |
140 Volt VCEO, 1 Amp continuous current
|
TY Semiconductor Co., Ltd
|
| ASI10652 TVU150 |
14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator UHF BAND, Si, NPN, RF POWER TRANSISTOR
NPN Silicon RF Power Transistor(Ic:25A,Vcbo: 28 V,Vceo: 60 V,Vebo: 3.5 V)(NPN 硅型射频功率晶体Ic:25A,Vcbo: 28 V,Vceo: 60 V,Vebo: 3.5 V))
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| CIT8050 CIT8050A CIT8050B CIT8050C CIT8050D |
0.625W General Purpose NPN Plastic Leaded Transistor. 20V Vceo, 2.000A Ic, 60 - 400 hFE
0.625W General Purpose NPN Plastic Leaded Transistor. 20V Vceo, 2.000A Ic, 60 - 120 hFE
0.625W General Purpose NPN Plastic Leaded Transistor. 20V Vceo, 2.000A Ic, 85 - 170 hFE
0.625W General Purpose NPN Plastic Leaded Transistor. 20V Vceo, 2.000A Ic, 120 - 240 hFE
0.625W General Purpose NPN Plastic Leaded Transistor. 20V Vceo, 2.000A Ic, 200 - 400 hFE
|
Continental Device India Limited
|
| MOC3010M05 MOC3023M MOC3010M MOC3011M MOC3012M MOC |
6-PIN DIP RANDOM-PHASE OPTOISOLATORS TRIAC DRIVER OUTPUT (250/400 VOLT PEAK)
|
FAIRCHILD[Fairchild Semiconductor]
|
| CDLL4620 CDLL4614 CDLL4615 CDLL4616 CDLL4617 CDLL4 |
4.3 volt zener diode
3.3 volt zener diode
5.1 volt zener diode
3.9 volt zener diode
2.4 volt zener diode
LEADLESS PACKAGE FOR SURFACE MOUNT
2-of-3 Decoder/Demultiplexer 8-US8 -40 to 85
2-of-3 Decoder/Demultiplexer 8-SM8 -40 to 85
2-of-3 Decoder/Demultiplexer 8-DSBGA -40 to 85
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
4.7 volt zener diode
5.6 volt zener diode
2.2 volt zener diode
3.6 volt zener diode
2.0 volt zener diode
|
Compensated Devices Incorporated
CDI-DIODE[Compensated Deuices Incorporated]
|
| ASI10654 TVV005 |
NPN Silicon RF Power Transistor(Ic:4.0 A,Vcbo: 55 V,Vceo: 30 V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:4.0 A,Vcbo: 55 V,Vceo: 30 V,Vebo: 4.0 V))
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| TVV100 ASI1005 ASI10524 ASI10539 ASI10638 ASI10662 |
NPN Silicon RF Power Transistor(Ic:16 A,Vcbo: 65 V,Vceo: 33 V,Vebo: 3.5 V)(NPN 硅型射频功率晶体Ic:16 A,Vcbo: 65 V,Vceo: 33 V,Vebo: 3.5 V))
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| ASI10749 VMB80-28S VHB25-12S |
NPN Silicon RF Power Transistor(Ic:9.0 A,Vcbo: 65 V,Vceo: 36 V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:9.0 A,Vcbo: 65 V,Vceo: 36 V,Vebo: 4.0 V))
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
