| PART |
Description |
Maker |
| GBL400 GBL404 GBL402 GBL401 GBL406 GBL408 |
Miniature single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 800V. Max average forward rectified output current 4.0A(Tc=50degC), 3.0A(Tj=40degC).
Miniature single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 600V. Max average forward rectified output current 4.0A(Tc=50degC), 3.0A(Tj=40degC).
Miniature single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 100V. Max average forward rectified output current 4.0A(Tc=50degC), 3.0A(Tj=40degC).
Miniature single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 200V. Max average forward rectified output current 4.0A(Tc=50degC), 3.0A(Tj=40degC).
Miniature single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 400V. Max average forward rectified output current 4.0A(Tc=50degC), 3.0A(Tj=40degC).
IN-LINE MINIATURE SINGLE PHASE SILICON BRIDGE RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 4.0 Amperes)
Aluminum Polymer SMT Capacitor; Capacitance: 1000uF; Voltage: 4V; Case Size: 10x8 mm; Packaging: Tape & Reel
|
PANJIT[Pan Jit International Inc.]
PanJit International Inc.
|
| NTE5327 NTE5326 NTE5328 |
Silicon bridge rectifier, single - phase, 25A. Maximum recurrent peak reverse voltage, Prv = 800V.
Silicon bridge rectifier, single - phase, 25A. Maximum recurrent peak reverse voltage, Prv = 600V.
Silicon bridge rectifier, single - phase, 25A. Maximum recurrent peak reverse voltage, Prv = 1000V.
|
NTE Electronics
|
| SMAJ530AMP550 SMAJ530550 |
Surface Mount TRANSZORB Transient Voltage Suppressors Peak Pulse Power 300W Reverse Voltage 530,550V
Diodes
|
Vishay
|
| NTE5558 NTE5550 NTE5552 NTE5554 |
Silicon controlled rectifier. Peak reverse blocking voltage Vrrm = 400V. Forward current 25A.
Silicon Controlled Rectifiers
Silicon controlled rectifier. Peak reverse blocking voltage Vrrm = 200V. Forward current 25A.
|
NTE[NTE Electronics]
|
| NSD03A20 |
Low Forward Voltage Drop Diode
Device = Diode ;; Ripetitive Peak Reverse Voltage(V) = 200
|
NIEC[Nihon Inter Electronics Corporation]
|
| U1GC44 |
Average Forward Current Repetitive Peak Reverse Voltage Mini Plastic Mold Package
|
Toshiba Semiconductor
|
| NTE5319 |
Single phase bridge rectifier, 4A. Maximum recurrent peak reverse voltage, Prv = 600V.
|
NTE Electronics
|
| NTE6006 NTE6007 NTE6008 NTE6009 NTE6011 NTE6010 |
Fast recovery rectifier, 200ns. Anode to case. Peak repetitive reverse voltage 400V. Average rectified forward current 40A.
Fast recovery rectifier, 200ns. Cathode to case. Peak repetitive reverse voltage 400V. Average rectified forward current 40A.
Fast recovery rectifier, 200ns. Anode to case. Peak repetitive reverse voltage 200V. Average rectified forward current 40A.
Fast Recovery Rectifier / 40A / 200ns
Fast Recovery Rectifier 40A 200ns
Fast Recovery Rectifier, 40A, 200ns
|
NTE[NTE Electronics]
NTE Electronics, Inc.
|
| BYS459F-1500 BYS459-1500 BYS459B-1500 |
High Voltage Damper Diodes Reverse Voltage 1500V Forward Current 6.5A Reverse Recovery Time 350ns
|
VISAY[Vishay Siliconix]
|
| 20KW256A 20KW160 20KW160A 20KW216 20KW216A 20KW240 |
256.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
160.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
192.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
112.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
300.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
204.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
232.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
280.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
172.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
180.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
|
MDE Semiconductor
|
| X4005S8-2.7 X4005S8-2.7A X4005S8-4.5A X4005S8I X40 |
RTC Module With CPU Supervisor 1-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO8
DIODE, STUD 95A 1200VDIODE, STUD 95A 1200V; Voltage, Vrrm:1200V; Current, If av:95A; Current, Ifs max:1150A; Voltage, forward at If:1.5V; Case style:E12; Thread size:M8; Diode type:Standard recovery; Polarity, diode:Stud Catho
THYRISTOR, CAPSULE 600ATHYRISTOR, CAPSULE 600A; Voltage, Vrrm:1200V; Current, It av:600A; Case style:TO-200; Current, It rms:1400A; Current, Itsm:11500A; Voltage, Vgt:2.0V; Current, Igt:200mA; Diameter, External:57.3mm; Length /
Thyristor Module; Current, It av:150A; Repetitive Reverse Voltage Max, Vrrm:1600V; Peak Surge Current:1250A; di/dt:100A/ s; Package/Case:G62
Thyristor Diode Module; Repetitive Reverse Voltage Max, Vrrm:1200V; Current Rating:220A
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
