| PART |
Description |
Maker |
| IRF7413GTRPBF IRF7413GPBF |
Generation V Technology
Ultra Low On-Resistance
|
International Rectifier
|
| KRF7301 |
Generation V Technology Ultra Low On-Resistance Dual N-Channel Mosfet
|
TY Semiconductor Co., Ltd
|
| IRLMS6702PBF IRLMS6702TRPBF IRLMS6702PBF-15 |
Generation V Technology, Micro6 Package Style, Ultra Low RDS
2.4 A, 20 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET
|
International Rectifier
|
| IRF7507PBF IRF7507TRPBF IRF7507PBF-15 |
Generation V Technology
HEXFET㈢Power MOSFET
HEXFET?Power MOSFET
Ultra Low On-Resistance
|
International Rectifier
|
| KRF7389 |
Generation V Technology Ultra Low On-Resistance Ultra Low On-Resistance
|
TY Semiconductor Co., Ltd
|
| V23990-K420-A60-0B-PM V23990-K420-A60-0A-PM V23990 |
Mitsubishi Generation 6.1 technology
|
Vincotech
|
| 8T49N028 |
Fourth Generation FemtoClock NG PLL technology
|
Integrated Device Techn...
|
| IRLML5103PBF11 IRLML5103TRPBF |
Lead-Free, Fast Switching, Available in Tape and Reel
generation v technology
|
International Rectifier
|
| SGP10N60A SGW10N60A SGP10N60A09 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGW15N60 SGP15N60 SGP15N6008 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGD04N60 SGP04N60 SGP04N6007 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGP02N12007 SGP02N120 SGD02N120 SGI02N120 |
Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
