| PART |
Description |
Maker |
| KX7N10L |
VDS (V) = 100V RDS(ON) 350m (VGS = 10V), ID=0.85A RDS(ON) 380m (VGS = 5V), ID=0.85A
|
TY Semiconductor Co., Ltd
|
| MA4EX900L-1226 |
Silicon Double Balanced HMIC Mixer, 700 - 1000 MHz HMIC硅双平衡混频器，700 - 1000兆赫
|
Daesan Electronics, Corp.
|
| BUZ21 BUZ21SMD |
Low Voltage MOSFETs - Power MOSFET, 100V,DPAK , RDSon=0.085 Ohm, 21A, NL
Power MOSFET, 100V,D²PAK , RDSon=0.085 Ohm, 21A, NL
SIPMOS Power Transistor
|
Infineon Technologies AG
|
| SPP80N10L SPB80N10L SPI80N10L |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=14mOhm, 80A, LL
Low Voltage MOSFETs - Power MOSFET, 100V, DPAK, RDSon=14mOhm, 80A, LL
Low Voltage MOSFETs - Power MOSFET, 100V, TO-262, RDSon=14mOhm, 80A, LL
SIPMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| BU208A ON0232 |
5.0 AMPERES NPN SILICON POWER TRANSISTOR 700 VOLTS 5 A, 700 V, NPN, Si, POWER TRANSISTOR, TO-204AA
From old datasheet system
|
Motorola Mobility Holdings, Inc.
ON Semiconductor
Motorola, Inc
|
| HMC399MS8E |
HIGH IP3 GaAs MMIC MIXER, 700 - 1000 MHz
700 MHz - 1000 MHz RF/MICROWAVE DOUBLE BALANCED MIXER, 10 dB CONVERSION LOSS-MAX
|
Hittite Microwave Corporation
|
| LD7217W LD7217S LD7217 |
6 GHz, 600 W/700 W CW, PPM FOCUSING, HIGH POWER GAIN 6千兆赫，600 W/700 W连续，分之为重点，高功率增益
6 GHz / 600 W/700 W CW / PPM FOCUSING / HIGH POWER GAIN
6 GHz 600 W/700 W CW PPM FOCUSING HIGH POWER GAIN
|
NEC, Corp.
NEC[NEC]
|
| IRF7831PBF IRF7831TRPBF IRF7831PBF-15 |
Ultra-Low Gate Impedance
HEXFET Power MOSFET ( VDSS = 30V , RDS(on)max = 3.6mΩ@VGS = 10V , Qg(typ.) = 40nC )
HEXFET Power MOSFET ( VDSS = 30V , RDS(on)max = 3.6mヘ@VGS = 10V , Qg(typ.) = 40nC )
High Frequency Point-of-Load Synchronous Buck Converter
|
International Rectifier
|
| OSC-20SM OSC-2.0SM |
40LD PIN, 2.4 GHZ IEEE/ZIGBEE TRANSCEIVER, -40C to 85C, 40-QFN, TUBE
14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator 14引脚DIP封装.0伏，高速CMOS/TTL电平，时钟振荡器
NPN Silicon RF Power Transistor(Ic: 700 mA,Vce: 30 V)(NPN 硅型射频功率晶体Ic: 700 mA,Vce: 30 V))
|
Advanced Semiconductor, Inc.
|
| SPP47N10 SPB47N10 SPI47N10 |
SIPMOS Power-Transistor
Low Voltage MOSFETs - Power MOSFET, 100V, DPAK, RDSon=33mOhm, 47A, NL
Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=33mOhm, 47A, NL
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| SI8405DB |
12-V P-Channel 1.8-V (G-S) MOSFET 12 - V P -通道.8 VGS）的MOSFET
|
Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
|
|
