| PART |
Description |
Maker |
| FMM150-0075P |
Trench Power MOSFET Phaseleg Topology in ISOPLUS i4-PAC
|
IXYS Corporation
|
| VKM60-01P1 |
HiPerFET-TM Power MOSFET H-Bridge Topology in ECO-PAC 2 75 A, 100 V, 0.025 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
IXYS, Corp.
|
| PSHM120-01 PSHM120_01 PSHM120/01 PSHM12001 |
Power MOSFET
Power MOSFET in ECO-PAC 2
Power MOSFET in ECO-PAC 2
|
Powersem GmbH
|
| NTZD3154N NTZD3154NT5G NTZD3154NT1G |
Small Signal MOSFET 20 V, 540 mA, Dual N?Channel
SMALL SIGNAL MOSFET 20 V, 540 MA, DUAL N−CHANNEL
|
ONSEMI
ON Semiconductor
|
| NTJD4401NT1 |
Small Signal MOSFET 20 V, Dual N-Channel, SC-88 ESD Protection 630 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
ON Semiconductor
|
| BUZ40B BSP372 BSP373 BSS129 BSS101 SN7000 BSS135 |
8 A, 500 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 TO-220, 3 PIN
SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level Avalanche rated 1.7 A, 100 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET
SIPMOS Small-Signal Transistor (N channel Enhancement mode Avalanche rated)
150 mA, 240 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
130 mA, 240 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
250 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
80 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
|
Infineon Technologies AG
SIEMENS AG
SIEMENS A G
|
| PSHM120D-01 PSHM120D_01 PSHM120D/01 PSHM120D01 |
Power MOSFET
Power MOSFET in ECO-PAC 2
|
Powersem GmbH
|
| 2N7002KDW |
Dual N-Channel Small Signal MOSFET
|
SeCoS Halbleitertechnologie GmbH
|
| LND150ND LND150N8 LND150N3 LND150 |
2.0 WtB Dual Conn Dip Plg Hsg Assy 38Ckt 30 mA, 500 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-Channel Depletion-Mode MOSFET
|
Supertex, Inc.
Supertex Inc
SUTEX[Supertex Inc]
SUTEX[Supertex, Inc]
|
| NTHD4502N NTHD4502NT1 NTHD4502NT1G |
Power MOSFET 30 V, 2.9 A, Dual N-Channel, ChipFET™
POWER MOSFET 30 V, 3.9 A, DUAL N−CHANNEL CHIPFET
Power MOSFET 30 V, 3.9 A, Dual N−Channel ChipFET 2200 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
ONSEMI[ON Semiconductor]
|
| BM-10EG57ND |
hi-eff red chips and green chips, the hi-eff red chips are made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate.
5X7 DOT MATRIX DISPLAY, HIGH EFFICIENCY RED/YELLOW GREEN, 30.48 mm
|
BRIGHT LED ELECTRONICS CORP
AMERICAN BRIGHT OPTOELECTRONICS CORP
|
|
