| PART |
Description |
Maker |
| BFN20 Q62702-F1058 |
NPN Silicon High-Voltage Transistor (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| FMW4 |
High breakdown voltage, Power dissipation: PC=300mW
|
TY Semiconductor Co., Ltd
|
| BFN18 Q62702-F885 BFN16 Q62702-F1056 SIEMENSAG-Q62 |
NPN Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)
From old datasheet system
|
Siemens Semiconductor G...
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| Q62702-F1064 BFN23 Q62702-F254 Q62702-F219 Q62702- |
PNP Silicon High-Voltage Transistor (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)
From old datasheet system
N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| 2SC3646 |
High-Voltage Switching Applications
Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| 2SC4953 |
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) 3 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
|
Panasonic Industrial Solutions
PANASONIC[Panasonic Semiconductor]
|
| 2SC3978A |
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) 2 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-220F
|
Panasonic, Corp.
|
| 2SC3906K |
High breakdown voltage.Collector-base voltage VCBO 120 V
|
TY Semiconductor Co., Ltd
|
| SOD-123 |
High Breakdown Voltage
|
SHENZHEN YONGERJIA INDUSTRY CO.,LTD
|
| 2SA1257 |
High breakdown voltage. Small output capacitance.Collector-base voltage VCBO -180 V
|
TY Semiconductor Co., Ltd
|
| MMSTA42 |
NPN High Voltage Amplifier
High breakdown voltage
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
