| PART |
Description |
Maker |
| GWK100J5001JLX000 GWK150J2209JLX000 GWK100I2702KLX |
GWK Vitreous Wirewound Resistors with Ferrules
|
Vishay Draloric
|
| CRIMPFOX-6-M |
All ferrules can be optimally crimped with a minimum amount of effort even in the case of large conductor cross sections
|
PHOENIX CONTACT
|
| CRIMPFOX-10 |
All ferrules can be optimally crimped with a minimum amount of effort even in the case of large conductor cross sections
|
PHOENIX CONTACT
|
| ZWK |
Cemented Resistors with Ferrules, Machined caps with inner thread availableCorrugated ribbon construction aids rapid cooling, Available in adjustable or non inductive design
|
Vishay
|
| GWK |
Vitreous Wirewound Resistors with Ferrules, Complete vitreous coating for perfect humidity protection, TC 100. . .180ppm/K
|
Vishay
|
| CM1200HC-66H |
HIGH POWER SWITCHING USE INSULATED TYPE
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| CM600HA-28H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
HIGH POWER SWITCHING USE INSULATED TYPE 大功率开关使用绝缘型
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Powerex, Inc.
|
| IRG4PC40FPBF IRG4PC40FPBF-15 |
INSULATED GATE BIPOLAR TRANSISTOR
INSULATED GATE BIPOLARTRANSISTOR Fast Speed IGBT
|
International Rectifier
|
| BCR16A BCR16B BCR16C BCR16E |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE A, B, C : NON-INSULATED TYPE E : INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| IRG4BC29K IRG4BC30K IRG4BC30 |
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
|
IRF[International Rectifier]
|
| IRG4RC10UPBF IRG4RC10UTRPBF IRG4RC10UPBF-15 |
INSULATED GATE BIPOLAR TRANSISTOR
Generation 4 IGBT design provides tighter parameter distribution and higher effciency than previous generation
INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
| GT40G121 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Current Resonance Inverter Switching Applications
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
