| PART |
Description |
Maker |
| SCS220AM |
Switching loss reduced, enabling high-speed switching . (2-pin package)
|
ROHM
|
| SCS240AE2 |
Switching loss reduced, enabling high-speed switching . (3-pin package)
|
ROHM
|
| SCS210AM |
Switching loss reduced, enabling high-speed switching . (2-pin package)
SiC Schottky Barrier Diodes
|
ROHM
ROHM Co., Ltd.
|
| SI4850EY-T1-GE3 SI4850EY09 |
N-Channel Reduced Qg, Fast Switching MOSFET
|
Vishay Siliconix
|
| SI9802DY |
Dual N-Channel Reduced Qg/ Fast Switching MOSFET
Dual N-Channel Reduced Qg, Fast Switching MOSFET
|
Vishay Siliconix
|
| SI4362BDY |
N-Channel 30-V (D-S) Reduced Qgd, Fast Switching WFET
|
Vaishali Semiconductor
|
| SI4824DY |
Asymmetric N-Channel, Reduced Qg, Fast Switching MOSFET
|
Vishay Siliconix
|
| HCU65R600T |
Extremely low switching loss
|
SemiHow Co.,Ltd.
|
| SI6820DQ |
N-Channel Reduced Qg / MOSFET with Schottky Diode
From old datasheet system
N-Channel, Reduced Qg, MOSFET with Schottky Diode
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
