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FDG315N - High performance trench technology for extremely low RDS(ON).

FDG315N_7549723.PDF Datasheet


 Full text search : High performance trench technology for extremely low RDS(ON).
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Bipolar Transistor; Collector Emitter Voltage, Vceo:350V; Transistor Polarity:NPN; Power Dissipation:1W; DC Current Gain Min (hfe):40; Collector Current:1A; Package/Case:3-TO-39; DC Current Gain Max (hfe):60; Terminal Type:5
T-PNP-SI-HV AF PWR AMP
High Performance CMOS 5 x 7 Alphanumeric Displays 高性能CMOS 5 × 7字母数字显示
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Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Vishay Intertechnology, Inc.
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