| PART |
Description |
Maker |
| 2SC3134 |
NPN Epitaxial Planar Silicon Transistors High Vebo, AF Amp Applications
|
SANYO
|
| 2SC3114 |
NPN Epitaxial Planar Silicon Transistors for High-VEBO, AF Amp Applications(用于高发射级电压AF放大器应用的NPN硅外延平面型晶体
|
Sanyo Electric Co.,Ltd.
|
| ADXL001-250BEZ ADXL001-250BEZ-R7 ADXL001-70BEZ-R7 |
High Performance Wide Bandwidth iMEMS? Accelerometer
SPECIALTY ANALOG CIRCUIT, CQCC8
High Performance, Wide Bandwidth Accelerometer
|
ANALOG DEVICES INC
|
| ASI10654 TVV005 |
NPN Silicon RF Power Transistor(Ic:4.0 A,Vcbo: 55 V,Vceo: 30 V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:4.0 A,Vcbo: 55 V,Vceo: 30 V,Vebo: 4.0 V))
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| MC33181 MC33181D MC33181P MC34181 MC34184DTB MC331 |
Low Power, High Slew Rate, Wide Bandwidth, JFET Input Operational Amplifiers QUAD OP-AMP, 11500 uV OFFSET-MAX, 4 MHz BAND WIDTH, PDSO14
Low Power, High Slew Rate, Wide Bandwidth, JFET Input Operational Amplifiers QUAD OP-AMP, 11000 uV OFFSET-MAX, 4 MHz BAND WIDTH, PDSO14
(MC34182 / MC34184) Low Power / High Slew Rate / Wide Bandwidth / JFET Input Operational Amplifiers
Dual Precision Timer 14-PDIP -40 to 85
(MC33181 - MC33184) Low Power / High Slew Rate / Wide Bandwidth / JFET Input Operational Amplifiers
|
http://
Motorola Mobility Holdings, Inc.
ON Semiconductor
Motorola, Inc.
|
| K4H511638C-UC K4H511638C-UCA2 K4H511638C-UCB0 K4H5 |
8-Bit, 20 kSPS ADC Serial Out, uProcessor Periph./Standalone, Rem. Op w/Ser. Data Link, Mux option 14-SOIC 荤的512Mb芯片DDR SDRAM内存规格
Single Wide Bandwidth High Output Drive Single Supply Op Amp 8-PDIP -40 to 125 荤的512Mb芯片DDR SDRAM内存规格
512Mb C-die DDR SDRAM Specification 荤的512Mb芯片DDR SDRAM内存规格
Single Wide Bandwidth High Output Drive Single Supply Op Amp 8-SOIC -40 to 125 荤的512Mb芯片DDR SDRAM内存规格
Dual Wide Bandwidth High Output Drive Single Supply Op Amp 8-SOIC -40 to 125 荤的512Mb芯片DDR SDRAM内存规格
8-Bit, 392 kSPS ADC Parallel Out, Microprocessor Peripheral, On-Chip Track-and-Hold, Single Channels 20-PDIP 荤的512Mb芯片DDR SDRAM内存规格
|
http://
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| ASI10615 HF250-50 |
NPN Silicon RF Power Transistor(Ic:40 A,Vcbo: 110 V,Vceo: 55V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:40 A,Vcbo: 110 V,Vceo: 55V,Vebo: 4.0 V))
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| R1RW0408DGE-2PI R1RW0408DI |
Memory>Fast SRAM>Asynchronous SRAM
Wide Temperature Range Version 4M High Speed SRAM (512-kword 】 8-bit)
Wide Temperature Range Version 4M High Speed SRAM (512-kword 隆驴 8-bit)
Wide Temperature Range Version 4M High Speed SRAM (512-kword × 8-bit)
|
Renesas Electronics Corporation
|
| SA5204AD SA5204AN NE5204 NE5204A NE5204AD NE5204AN |
RES 110 OHM 1/10W .5% 0805 SMD 0 MHz - 350 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
Wide-band high-frequency amplifier
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| SST440 |
Wide Band High Gain
|
Micross
|
