| PART |
Description |
Maker |
| IRKLF132 2213 IRKHF152-04HL IRKLF132-08HL IRKLF152 |
INT-A-pak Power Modules(可控二极H结构INT-A-pak功率模块) 相依甲柏功率模块（可控硅/二极结构相依甲柏功率模块
INT-A-pak Power Modules(可控可控L结构INT-A-pak功率模块)
INT-A-pak Power Modules(可控二极管H结构INT-A-pak功率模块)
From old datasheet system
FAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR
|
International Rectifier, Corp.
|
| VUO27-06NO7 VUO27-08NO7 VUO27-12NO7 |
Power Modules/Rectifier Bridge Modules: Three Phase Diode Bridges
|
IXYS
|
| PM10CNJ060 |
IPMS Modules: 600V
INTELLIGENT POWER MODULES
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| PKA2432PIL PKA2231CI PKA2231PI PKA2000 PKA2211CI P |
V(in): -0.5 to 36V; 25-40W DC/DC power module
25?40 W DC/DC Power Modules 24 V Input Series
25-40 W DC/DC Power Modules 24 V Input Series 25-40中西区区议会/ DC电源模块24 V输入系列
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
| RM60CZ-2H RM60DZ-2H RM60CZ-H RM60DZ-H RM60DZ-M RM6 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| RM100SZ-6S RM100SZ-6S/-6R RM100SZ-6R |
DIODE MODULES MEDIUM POWER GENERAL USE NON-INSULATED TYPE
Fast Recovery Diode Modules, F Series (for welding)
|
Mitsubishi Electric Corporation
|
| CM150E3U-24H |
IGBT Modules:1200V
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| MDD220-18N1 MDD220 MDD220-08N1 MDD220-12N1 MDD220- |
High Power Diode Modules
Thyristor and Rectifiers Modules
|
IXYS[IXYS Corporation]
|
| MII75-12A3 MDI75-12A3 MID75-12A3 |
IGBT Modules - Short Circuit SOA Capability Square RBSOA 90 A, 1200 V, N-CHANNEL IGBT
IGBT Modules: Boost Configurated IGBT Modules
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
