| PART |
Description |
Maker |
| IXBT42N170 |
(IXBH42N170 / IXBT42N170) High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| STE70IE120 |
Monolithic Emitter Switched Bipolar Transistor ESBT? 1200 V - 70 A - 0.014 Ω Power Module
Monolithic Emitter Switched Bipolar Transistor ESBT 1200V 70A 0.014Ohm Power Module
Monolithic Emitter Switched Bipolar Transistor ESBT㈢ 1200 V - 70 A - 0.014 ヘ Power Module
|
ST Microelectronics, Inc.
STMICROELECTRONICS[STMicroelectronics]
|
| UPC1652G |
SILICON MONOLITHIC BIPOLAR INTEGRATED CIRCUIT WIDE BAND AMPLIFIER
MICROWAVE/MILLIMETER WAVE AMPLIFIER,BIPOLAR,SOP,8PIN,PLASTIC
From old datasheet system
|
NEC Corp.
NEC Electron Devices
|
| UPC1032H |
Dual Low Noise Preamplifier Silicon Bipolar Monolithic Intergated Circuit
DUAL LOW NOISE PREAMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT
|
NEC
ETC
List of Unclassifed Manufacturers
|
| AN15525A |
Silicon Monolithic Bipolar IC
|
Panasonic Semiconductor
|
| AN5539 |
BIPOLAR MONOLITHIC VERTICAL DEFLECTION OUTPUT IC
|
Nais(Matsushita Electric Works)
Panasonic Semiconductor
Matsushita Electric Works(Nais)
|
| TA8264AH |
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic
|
Toshiba Semiconductor
|
| TA4017FT |
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic
|
TOSHIBA[Toshiba Semiconductor]
|
| TA76433FC |
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic
|
TOSHIBA[Toshiba Semiconductor]
|
| IXBH42N170A IXBT42N170A |
(IXBH42N170A / IXBT42N170A) BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| TA1287FG |
BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC 双极线性集成电路硅单片
|
Toshiba, Corp.
|
