| PART |
Description |
Maker |
| 2SD1007 |
High collector to emitter voltage: VCEO 120V.Collector-base voltage VCBO 120 V
|
TY Semiconductor Co., Ltd
|
| 2SA1400-Z |
High Voltage: VCEO=-400V High speed:tr 1.0ìs Collector to Base Voltage VCBO -400 V
|
TY Semiconductor Co., Ltd
|
| 2SC3360 |
High DC current gain.hFE=90 to 450 High voltage VCEO=200V
|
TY Semiconductor Co., Ltd
|
| 2SD814A |
High collector-emitter voltage VCEO Low noise voltage NV
|
TY Semiconductor Co., Ltd
|
| 2SC5211 |
High voltage VCEO=50V. Small package for mounting.Collector-base voltage VCBO 55 V
|
TY Semiconductor Co., Ltd
|
| CFB612 |
60.000W Medium Power PNP Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 1000 hFE.
TRANSISTOR | BJT | DARLINGTON | PNP | 120V V(BR)CEO | 6A I(C) | TO-220FP
|
Continental Device India Limited
|
| 2SA1415 |
Adoption of FBET Process High Breakdown Voltage (VCEO = 160V)
|
TY Semiconductor Co., Ltd
|
| 2SC4102_1 2SC2389S 2SC3906K 2SC4102 2SC4102T106S |
High-voltage Amplifier Transistor (120V, 50mA)
|
ROHM[Rohm]
|
| 2SC4102 2SA1514K A5800309 |
High-Voltage Amplifier Transistor (-120V, -50mA)
From old datasheet system
|
ROHM
|
| 2SC3515 |
High Voltage: VCBO = 300V , VCEO = 300V Low Saturation Voltage: VCE(sat) = 0.5V (max)
|
TY Semiconductor Co., L...
|
| 2SD1006 |
High collector to emitter voltage: VCEO 100V. Collector-base voltage VCBO 100 V
|
TY Semiconductor Co., Ltd
|
