| PART |
Description |
Maker |
| AO6601 MC6601 |
N & P-Channel 32-V (D-S) MOSFET High performance trench technology
|
ShenZhen FreesCale Electronics. Co., Ltd
|
| MC7415 |
P-Channel 20-V (D-S) MOSFET High performance trench technology
|
ShenZhen FreesCale Electronics. Co., Ltd
|
| AO7407 MC7407 |
P-Channel 20-V (D-S) MOSFET High performance trench technology
|
ShenZhen FreesCale Electronics. Co., Ltd
|
| FDG330P |
High performance trench technology for extremely low R
|
TY Semiconductor Co., L...
|
| FDC6318P |
High performance trench technology for extremely low R
|
TY Semiconductor Co., Ltd
|
| FDC6312P |
High performance trench technology for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| FDN8601 |
High performance trench technology for extremely low rDS(on)
|
TY Semiconductor Co., Ltd
|
| MC8820 |
Dual N-Channel Logical Level MOSFET High performance trench technology
|
ShenZhen FreesCale Electronics. Co., Ltd
|
| MC8814 |
Dual N-Channel Logical Level MOSFET High performance trench technology
|
ShenZhen FreesCale Electronics. Co., Ltd
|
| FDD3860 FDD386008 |
N-Channel PowerTrench MOSFET 100V, 29A, High performance trench technology for extremely low
|
Fairchild Semiconductor
|