| PART |
Description |
Maker |
| TH50VPN564 TH50VPN5640EBSB |
MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS PSEUDO SRAM AND NAND E2PROM MEMORY MIXED MULTI-CHIP PACKAGE
|
TOSHIBA
|
| BC847PN |
Multi-Chip Transistor
|
SeCoS Halbleitertechnologie GmbH
|
| MMDT4401 |
Multi-Chip Transistor
|
SeCoS Halbleitertechnologie GmbH
|
| UMD3N |
Multi-Chip Digital Transistor
|
SeCoS Halbleitertechnologie GmbH
|
| BC847S |
Multi-chip transistor (NPN)
|
Shenzhen Jin Yu Semiconductor Co., Ltd.
|
| FMBA14 |
NPN Multi-Chip Darlington Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
| TPC6902 |
Multi-Chip Transistor Silicon NPN / PNP Epitaxial Type
|
Toshiba Semiconductor
|
| MMPQ2907A FFB2907A FFB2907A_1 FMB2907A FMB2907ANL |
PNP Multi-Chip General Purpose Amplifier
600 mA, 60 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
|
FAIRCHILD[Fairchild Semiconductor]
FAIRCHILD SEMICONDUCTOR CORP
|
| M39P0R9070E2 M39P0R9070E2ZADE M39P0R9070E2ZADF |
256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package
|
Numonyx B.V
|
| HN7G01FU |
Multi Chip Discrete Device Power Management Switch Application Driver Circuit Application Interface Circuit Application
TOSHIBA Multi Chip Discrete Device
|
TOSHIBA[Toshiba Semiconductor]
|
| M36P0R9060E0 M36P0R9060E0ZACE M36P0R9060E0ZACF |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package
|
Numonyx B.V
|
