| PART |
Description |
Maker |
| 55HQ025 55HQ020 |
V(rwm): 25V; 60A schottky power rectifier
V(rwm): 20V; 60A schottky power rectifier
|
International Rectifier
|
| 60CTQ150 |
SCHOTTKY RECTIFIER
150V 60A Schottky Discrete Diode in a TO-220AB package
|
IRF[International Rectifier]
|
| OM4001ST OM4002ST |
15V 45A Hi-Rel Schottky Discrete Diode in a T-2 package
15V 60A Hi-Rel Schottky Discrete Diode in a T-2 package
|
International Rectifier
|
| HGTG30N60B3D |
60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(60A, 600V, UFS系列 带超快二极管N沟道绝缘栅双极型晶体 60 A, 600 V, N-CHANNEL IGBT, TO-247
|
Intersil, Corp.
|
| HFB60HF20 |
60 A, 200 V, SILICON, RECTIFIER DIODE
Ultrafast, Soft Recovery Diode
200V 60A Hi-Rel Ultra-Fast Discrete Diode in a SMD-1 package
|
IRF[International Rectifier]
|
| BAT240A |
Silicon Schottky Diode (Rectifier Schottky diode for modem applications High reverse voltage For power supply)
|
SIEMENS A G
SIMENS
Siemens Semiconductor Group
|
| NTLUF4189NZ NTLUF4189NZTAG NTLUF4189NZTBG |
Power MOSFET and Schottky Diode 30 V, N−Channel with 0.5 A Schottky Barrier Diode, 1.6 x 1.6 x 0.55 mm Cool Package
|
ON Semiconductor
|
| BAT60B Q62702-A1189 BAT60 Q62702-A118 |
From old datasheet system
Silicon Schottky Diode (Rectifier Schottky diode for mobile communication Low voltage high inductane For power supply
|
SIEMENS[Siemens Semiconductor Group]
|
| BAT60A Q62702-A1188 |
Silicon Schottky Diode (Rectifier Schottky diode with extreme low VF drop for mobile communication For power supply 硅肖特基二极管（肖特基二极管整流极端VF为移动通信电源供应下降
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| NTHD4N02F NTHD4N02FT1G NTHD4N02FT1 NTHD4N02 |
Power MOSFET and Schottky Diode 20 V, 2.7A, N-Channel, w/1.0 A Schottky Barrier Diode, ChipFET™
|
ON Semiconductor
|
| MBR6030PT3 MBR6045PT MBR6030PT MBR6035PT MBR6040PT |
60A SCHOTTKY BARRIER RECTIFIER
|
DIODES[Diodes Incorporated]
|
